公开(公告)号：US3701659A

公开(公告)日：1972-10-31

申请号：US3701659D

申请日：1970-06-01

Applicant: IBM

Inventor： DOO VEN Y ,  REGH JOSEPH ,  SETO DAVID K

IPC: G03F1/54 ,  G03C5/00

CPC classification number: G03F1/54

Abstract: A PHOTOLITHOGRAPHIC MASK COMPRISING A SUBSTRATE OF QUARTZ OR GLASS AND A PATTERN-DEFINING LAYER OF A SEMICONDUCTOR MATERIAL SUCH AS SILICON. THE PATTERN IS DEFINED IN THE SEMICONDUCTOR MATERIAL BY ETCHING OF THE SEMICONDUCTOR, INVOLVING DISPLACEMENT OF THE SEMICONDUCTOR IN SELECTED AREAS WITH A METAL SUCH AS COPPER. IN THIS WAY, A HIGH RESOLUTION MASK IS OBTAINABLE HAVING THE ADDED FEATURE OF BEING PARTIALLY TRANSPARENT.

公开(公告)号：US3419956A

公开(公告)日：1969-01-07

申请号：US52227866

申请日：1966-01-21

Applicant: IBM

Inventor： KREN JOHN G ,  JOSEPH REGH ,  SETO DAVID K

IPC: C23F1/02 ,  H01L21/00 ,  H01L21/762

CPC classification number: H01L21/76297 ,  H01L21/00 ,  Y10S148/051 ,  Y10S148/085 ,  Y10S438/928 ,  Y10S438/977