公开(公告)号：US3701659A

公开(公告)日：1972-10-31

申请号：US3701659D

申请日：1970-06-01

Applicant: IBM

Inventor： DOO VEN Y ,  REGH JOSEPH ,  SETO DAVID K

IPC: G03F1/54 ,  G03C5/00

CPC classification number: G03F1/54

Abstract: A PHOTOLITHOGRAPHIC MASK COMPRISING A SUBSTRATE OF QUARTZ OR GLASS AND A PATTERN-DEFINING LAYER OF A SEMICONDUCTOR MATERIAL SUCH AS SILICON. THE PATTERN IS DEFINED IN THE SEMICONDUCTOR MATERIAL BY ETCHING OF THE SEMICONDUCTOR, INVOLVING DISPLACEMENT OF THE SEMICONDUCTOR IN SELECTED AREAS WITH A METAL SUCH AS COPPER. IN THIS WAY, A HIGH RESOLUTION MASK IS OBTAINABLE HAVING THE ADDED FEATURE OF BEING PARTIALLY TRANSPARENT.

公开(公告)号：US3615955A

公开(公告)日：1971-10-26

申请号：US3615955D

申请日：1969-02-28

Applicant: IBM

Inventor： REGH JOSEPH ,  SILVEY GENE A

IPC: C09K3/14 ,  B24B37/10 ,  C23F3/00 ,  C23F3/06 ,  H01L21/304 ,  H01L21/306 ,  H01L7/50

CPC classification number: H01L21/02024 ,  B24B37/102 ,  C23F3/06

Abstract: A silicon surface is polished by a simultaneous application of mechanical and chemical polishing procedures. The silicon surface to be polished is maintained continuously wetted with an excess quantity of a displacement plating solution containing a mercury cation and a fluoride anion. Mercury is deposited on the surface by the displacement of silicon and a simultaneous and continuous wiping of the surface removes the mercury from the high areas on the silicon surface.

公开(公告)号：US3436259A

公开(公告)日：1969-04-01

申请号：US3436259D

申请日：1966-05-12

Applicant: IBM

Inventor： REGH JOSEPH ,  SILVEY GENE A ,  GARDINER JAMES R

IPC: B24B37/04 ,  H01L21/20 ,  H01L21/288 ,  H01L21/306 ,  C23C17/02 ,  B44D5/10 ,  B44D5/12

CPC classification number: B24B37/102 ,  B24B37/042 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/288 ,  H01L21/30625