公开(公告)号：US3600241A

公开(公告)日：1971-08-17

申请号：US3600241D

申请日：1968-09-09

Applicant: IBM

Inventor： DOO VEN Y ,  SPIRO ANDREA

IPC: H01L21/00 ,  H01L21/322 ,  H01L21/74 ,  H01L23/29 ,  H01L23/544 ,  H01L7/00 ,  C23C11/00 ,  H01L7/36

CPC classification number: H01L23/544 ,  H01L21/00 ,  H01L21/3221 ,  H01L21/74 ,  H01L23/291 ,  H01L2924/0002 ,  Y10S148/007 ,  Y10S148/017 ,  Y10S148/037 ,  Y10S148/04 ,  Y10S148/041 ,  Y10S148/043 ,  Y10S148/085 ,  H01L2924/00

Abstract: IN SEMICONDUCTOR DEVICE FABRICATION, AFTER DIFFUSION HAS BEEN CARRIED OUT AT ELEVATED TEMPERATURES THROUGH A SIO2 OR OTHER DIFFUSION BARRIER MASKS, THE MASK IS STRIPPED FROM THE SURFACE OF THE SEMICONDUCTOR SUBSTRATE, AND THE SURFACE OF THE SEMICONDUCTOR SUBSTRATE IS REOXIDIZED. THIS ELIMINATES SURFACE DEFECTS IN THE SEMICONDUCTOR SUBSTRATE WHICH TEND TO ARISE AT THE ELEVATED TEMPERATURES OVER RELATIVELY LONG PERIODS OF TIME NECASSRY FOR DIFFUSION. WHERE AN EPITAXIAL LAYER IS TO BE FORMED ON THE SURFACE OF THE SUBSTRATE, THE OXIDE LAYER IS FIRST REMOVED FROM THE SURFACE. THIS REDUCES STACKING FAULTS IN THE SUBSTRATE.

公开(公告)号：US3539759A

公开(公告)日：1970-11-10

申请号：US3539759D

申请日：1968-11-08

Applicant: IBM

Inventor： SPIRO ANDREA ,  WHITE WILLIAM H

IPC: H01L21/673 ,  C23C16/44 ,  C23C16/458 ,  C30B25/12 ,  C30B31/00 ,  C30B31/14 ,  C30B35/00 ,  E04B9/20 ,  F27D3/12 ,  H01L21/205 ,  H01L21/22 ,  H01L31/10 ,  H05B5/00 ,  H05B9/00

CPC classification number: C30B25/12 ,  C30B31/00 ,  C30B35/00 ,  E04B9/20