公开(公告)号：US20230386987A1

公开(公告)日：2023-11-30

申请号：US18321210

申请日：2023-05-22

申请人： IDEAL POWER INC.

发明人： Jiankang BU ,  Robert Daniel BRDAR

IPC分类号： H01L23/498 ,  H01L23/373 ,  H01L23/00 ,  H01L25/065 ,  H01L25/11

CPC分类号： H01L23/49833 ,  H01L23/3735 ,  H01L24/29 ,  H01L25/0655 ,  H01L24/32 ,  H01L24/33 ,  H01L25/117 ,  H01L25/115 ,  H01L24/83 ,  H01L2224/29139 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L23/3121

摘要： A double-sided cooling package for a double-sided, bi-directional junction transistor can include a double-sided, bi-directional, junction transistor chip with an individual, double-sided, bi-directional power switch (collectively, a DSTA). The DSTA can be sandwiched between heat sinks. Each heat sink can include a direct plating copper (DPC) structure, a direct copper bonding (DCB) structure or a direct aluminum bond (DAB) structure. In addition, each heat sink can have opposed first and second copper layers on a substrate, and copper contacts that extend from a respective second copper layer through vias in each substrate to an exterior of the cooling package.

公开(公告)号：US20240113210A1

公开(公告)日：2024-04-04

申请号：US18539959

申请日：2023-12-14

申请人： IDEAL POWER INC.

发明人： Jiankang BU ,  Constantin BULUCEA ,  Alireza MOJAB ,  Jeffrey KNAPP ,  Robert Daniel BRDAR

IPC分类号： H01L29/747 ,  H01L29/08 ,  H01L29/10 ,  H01L29/66

CPC分类号： H01L29/747 ,  H01L29/083 ,  H01L29/1012 ,  H01L29/66386

摘要： Bi-directional trench power switches. At least one example is a semiconductor device comprising: an upper base region associated with a first side of a substrate of semiconductor material; an upper-CE trench defined on the first side, the upper-CE trench defines a proximal opening at the first side and a distal end within the substrate; an upper collector-emitter region disposed at the distal end of the upper-CE trench; a lower base region associated with a second side of substrate; and a lower collector-emitter region associated with the second side.

公开(公告)号：US20230048984A1

公开(公告)日：2023-02-16

申请号：US17884803

申请日：2022-08-10

申请人： IDEAL POWER INC.

发明人： Jiankang BU ,  Constantin BULUCEA ,  Alireza MOJAB ,  Jeffrey KNAPP ,  Robert Daniel BRDAR

IPC分类号： H01L29/747 ,  H01L29/08 ,  H01L29/10 ,  H01L29/66

摘要： Bi-directional trench power switches. At least one example is a semiconductor device comprising: an upper base region associated with a first side of a substrate of semiconductor material; an upper-CE trench defined on the first side, the upper-CE trench defines a proximal opening at the first side and a distal end within the substrate; an upper collector-emitter region disposed at the distal end of the upper-CE trench; a lower base region associated with a second side of substrate; and a lower collector-emitter region associated with the second side.