公开(公告)号：US11408769B2

公开(公告)日：2022-08-09

申请号：US16592228

申请日：2019-10-03

Applicant: IMEC VZW

Inventor： Nicolaas Tack ,  Nick Spooren ,  Bart Vereecke

IPC: G01J3/28 ,  G01J3/36

Abstract: A spectral sensor comprises (i) a first type of interference filter comprising reflective multilayers of a first type and an intermediate layer configured to give a constructive interference for a wavelength in a first range, and (ii) a second type of interference filter comprising reflective multilayers of a second type and an intermediate layer configured to give a constructive interference for a wavelength in a second range. The sensor further comprises first and second filter stacks configured to selectively transmit light in the first and second wavelength ranges to first and second photo-sensitive areas, respectively. The first filter stack includes the first type of interference filter and a second type of dielectric mirror that is reflective in the second wavelength range. The second filter stack includes the second type of interference filter and a first type of dielectric mirror that is reflective in the first wavelength range.

公开(公告)号：US20170005132A1

公开(公告)日：2017-01-05

申请号：US15191412

申请日：2016-06-23

Applicant: IMEC VZW

Inventor： Bart Vereecke ,  Deniz Sabuncuoglu Tezcan ,  Philippe Soussan

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  G01J3/0259 ,  G01J3/50 ,  G01J3/513 ,  G01J2003/1226 ,  H01L27/1461 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14629 ,  H01L27/14643

Abstract: An integrated circuit for an imaging device including an array of photo-sensitive areas is disclosed. In one aspect the integrated circuit includes a first multi-layer structure and a second multi-layer structure arranged over a first and a second photo-sensitive area, respectively. The second multi-layer structures each have a bottom and a top reflective structure and a spacer layer arranged therebetween. The spacer layer has a thickness such that the multi-layer structure selectively transmits a narrow range of wavelengths of electro-magnetic radiation. The bottom and top reflective structures include a stack of alternating layers of a first and a second material. Thickness and/or material of the alternating layers of the first multi-layer structure differ from thickness and/or material of the alternating layers of the second multi-layer structure.

Abstract translation: 公开了一种用于包括光敏区域阵列的成像装置的集成电路。 在一个方面，集成电路包括分别布置在第一和第二光敏区域上的第一多层结构和第二多层结构。 第二多层结构各自具有底部和顶部反射结构以及间隔层。 间隔层具有使得多层结构选择性地传输电磁辐射的窄波长范围的厚度。 底部和顶部反射结构包括第一和第二材料的交替层叠。 第一多层结构的交替层的厚度和/或材料不同于第二多层结构的交替层的厚度和/或材料。

公开(公告)号：US11244977B2

公开(公告)日：2022-02-08

申请号：US15846584

申请日：2017-12-19

Applicant: IMEC VZW

Inventor： Nicolaas Tack ,  Bert Geelen ,  Bart Vereecke

IPC: H01L27/146 ,  G01J3/02 ,  G01J3/28 ,  G01J3/26 ,  G01J1/42

Abstract: An imaging sensor comprises: an array of light-detecting elements, wherein each light-detecting element in the array of light-detecting elements is arranged in the imaging sensor so as to detect a respective wavelength interval, wherein the respective wavelength interval differs for different light-detecting elements; a pattern arranged on the array of light-detecting elements, wherein the pattern defines a plurality of transparent areas, each transparent area being associated with a corresponding light-detecting element in the array of light-detecting elements, wherein a size of a transparent area among the plurality of transparent areas is dependent of the corresponding light-detecting element with which the transparent area is associated.

公开(公告)号：US09929206B2

公开(公告)日：2018-03-27

申请号：US15191412

申请日：2016-06-23

Applicant: IMEC VZW

Inventor： Bart Vereecke ,  Deniz Sabuncuoglu Tezcan ,  Philippe Soussan ,  Nicolaas Tack

IPC: H01L27/32 ,  H01L27/146 ,  G01J3/51 ,  G01J3/50 ,  G01J3/02 ,  G01J3/12

CPC classification number: H01L27/14685 ,  G01J3/0259 ,  G01J3/50 ,  G01J3/513 ,  G01J2003/1226 ,  H01L27/1461 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14629 ,  H01L27/14643

Abstract: An integrated circuit for an imaging device including an array of photo-sensitive areas is disclosed. In one aspect the integrated circuit includes a first multi-layer structure and a second multi-layer structure arranged over a first and a second photo-sensitive area, respectively. The second multi-layer structures each have a bottom and a top reflective structure and a spacer layer arranged therebetween. The spacer layer has a thickness such that the multi-layer structure selectively transmits a narrow range of wavelengths of electro-magnetic radiation. The bottom and top reflective structures include a stack of alternating layers of a first and a second material. Thickness and/or material of the alternating layers of the first multi-layer structure differ from thickness and/or material of the alternating layers of the second multi-layer structure.