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公开(公告)号：US20180329289A1
公开(公告)日：2018-11-15
申请号：US15979800
申请日：2018-05-15
Applicant: IMEC VZW , Imec USA Nanoelectronics Design Center
Inventor： Emily Gallagher , Cedric Huyghebaert , Ivan Pollentier , Hanns Christoph Adelmann , Marina Timmermans , Jae Uk Lee
IPC: G03F1/64 , C01B32/159 , G03F1/22
Abstract: The present disclosure relates to a method for forming a carbon nanotube pellicle membrane for an extreme ultraviolet lithography reticle, the method comprising: bonding together overlapping carbon nanotubes of at least one carbon nanotube film by pressing the at least one carbon nanotube film between a first pressing surface and a second pressing surface, thereby forming a free-standing carbon nanotube pellicle membrane. The present disclosure also relates to a method for forming a pellicle for extreme ultraviolet lithography and for forming a reticle system for extreme ultraviolet lithography respectively.
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公开(公告)号：US10712659B2
公开(公告)日：2020-07-14
申请号：US15979800
申请日：2018-05-15
Applicant: IMEC VZW , Imec USA Nanoelectronics Design Center
Inventor： Emily Gallagher , Cedric Huyghebaert , Ivan Pollentier , Hanns Christoph Adelmann , Marina Timmermans , Jae Uk Lee
Abstract: The present disclosure relates to a method for forming a carbon nanotube pellicle membrane for an extreme ultraviolet lithography reticle, the method comprising: bonding together overlapping carbon nanotubes of at least one carbon nanotube film by pressing the at least one carbon nanotube film between a first pressing surface and a second pressing surface, thereby forming a free-standing carbon nanotube pellicle membrane. The present disclosure also relates to a method for forming a pellicle for extreme ultraviolet lithography and for forming a reticle system for extreme ultraviolet lithography respectively.
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公开(公告)号：US10592632B2
公开(公告)日：2020-03-17
申请号：US15957409
申请日：2018-04-19
Applicant: IMEC VZW
Inventor： Ryan Ryoung han Kim , Jae Uk Lee
Abstract: Methods and systems for analyzing design of an integrated circuit are described. An example method includes receiving a design layout for an integrated circuit and forming a plurality of images of portions of the design layout. The method also includes, for each image of a portion of the design layout, calculating a Fourier transform representation of the image and extracting values of pre-defined parameters from the Fourier transform representation. The method also includes comparing the extracted parameter values of the plurality of images to create a clustering model by unsupervised machine learning and to sort each image of a portion of the design layout into a cluster defined by the clustering model. The method also includes determining a number of images sorted into at least one cluster defined by the clustering model.
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Patent Agency Ranking
公开(公告)号：US20180307792A1
公开(公告)日：2018-10-25
申请号：US15957409
申请日：2018-04-19
Applicant: IMEC VZW
Inventor： Ryan Ryoung han Kim , Jae Uk Lee
Abstract: Methods and systems for analyzing design of an integrated circuit are described. An example method includes receiving a design layout for an integrated circuit and forming a plurality of images of portions of the design layout. The method also includes, for each image of a portion of the design layout, calculating a Fourier transform representation of the image and extracting values of pre-defined parameters from the Fourier transform representation. The method also includes comparing the extracted parameter values of the plurality of images to create a clustering model by unsupervised machine learning and to sort each image of a portion of the design layout into a cluster defined by the clustering model. The method also includes determining a number of images sorted into at least one cluster defined by the clustering model.
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公开(公告)号：US11092886B2
公开(公告)日：2021-08-17
申请号：US15979827
申请日：2018-05-15
Applicant: IMEC VZW , Imec USA Nanoelectronics Design Center
Inventor： Marina Timmermans , Emily Gallagher , Ivan Pollentier , Hanns Christoph Adelmann , Cedric Huyghebaert , Jae Uk Lee
Abstract: The present disclosure relates to a method for forming a pellicle for extreme ultraviolet lithography, the method comprising: forming a coating of a first material on a peripheral region of a main surface of a carbon nanotube pellicle membrane, the membrane including a carbon nanotube film, arranging the carbon nanotube pellicle membrane on a pellicle frame with the peripheral region facing a support surface of the pellicle frame, wherein the support surface of the pellicle frame is formed by a second material, and bonding together the coating of the carbon nanotube pellicle membrane and the pellicle support surface by pressing the carbon nanotube pellicle membrane and the pellicle support surface against each other. The present disclosure relates also relates to a method for forming a reticle system for extreme ultraviolet lithography.
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6.发明申请公开(公告)号：US20190155138A1
公开(公告)日：2019-05-23
申请号：US16168234
申请日：2018-10-23
Applicant: IMEC VZW
Inventor： Jae Uk Lee , Ryan Ryoung han Kim
IPC: G03F1/22
Abstract: Example embodiments relate to masks for extreme-ultraviolet (extreme-UV) lithography and methods for manufacturing the same. An example embodiment includes a mask for extreme-UV lithography. The mask includes a substrate. The mask also includes a reflecting structure that is supported by the substrate in a use face and is reflection-effective for extreme-UV radiation impinging onto the reflecting structure from a side opposite the substrate. Further, the mask includes attenuating and phase-shifting portions that are distributed within the use face that are suitable for attenuating and phase-shifting extreme-UV radiation parts reflected by the mask through the portions such that an upper surface of the mask in the use face, formed partly by the portions on the side opposite the substrate, exhibits height variations at sidewalls of the portions that extend perpendicular to the use face. In addition, the mask includes a capping layer that covers at least the sidewalls of the portions.
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7.发明授权公开(公告)号：US11092884B2
公开(公告)日：2021-08-17
申请号：US16168234
申请日：2018-10-23
Applicant: IMEC VZW
Inventor： Jae Uk Lee , Ryan Ryoung Han Kim
Abstract: Example embodiments relate to masks for extreme-ultraviolet (extreme-UV) lithography and methods for manufacturing the same. An example embodiment includes a mask for extreme-UV lithography. The mask includes a substrate. The mask also includes a reflecting structure that is supported by the substrate in a use face and is reflection-effective for extreme-UV radiation impinging onto the reflecting structure from a side opposite the substrate. Further, the mask includes attenuating and phase-shifting portions that are distributed within the use face that are suitable for attenuating and phase-shifting extreme-UV radiation parts reflected by the mask through the portions such that an upper surface of the mask in the use face, formed partly by the portions on the side opposite the substrate, exhibits height variations at sidewalls of the portions that extend perpendicular to the use face. In addition, the mask includes a capping layer that covers at least the sidewalls of the portions.
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公开(公告)号：US20180329291A1
公开(公告)日：2018-11-15
申请号：US15979827
申请日：2018-05-15
Applicant: IMEC VZW , Imec USA Nanoelectronics Design Center
Inventor： Marina Timmermans , Emily Gallagher , Ivan Pollentier , Hanns Christoph Adelmann , Cedric Huyghebaert , Jae Uk Lee
IPC: G03F1/64
Abstract: The present disclosure relates to a method for forming a pellicle for extreme ultraviolet lithography, the method comprising: forming a coating of a first material on a peripheral region of a main surface of a carbon nanotube pellicle membrane, the membrane including a carbon nanotube film, arranging the carbon nanotube pellicle membrane on a pellicle frame with the peripheral region facing a support surface of the pellicle frame, wherein the support surface of the pellicle frame is formed by a second material, and bonding together the coating of the carbon nanotube pellicle membrane and the pellicle support surface by pressing the carbon nanotube pellicle membrane and the pellicle support surface against each other. The present disclosure relates also relates to a method for forming a reticle system for extreme ultraviolet lithography.
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