Matrix-Vector Multiplications Based on Charge-Summing Memory Cell Strings

    公开(公告)号:US20240212763A1

    公开(公告)日:2024-06-27

    申请号:US18392161

    申请日:2023-12-21

    Applicant: IMEC VZW

    CPC classification number: G11C16/26 G11C16/0433 G11C16/08 G11C16/102

    Abstract: Example embodiments relate to matrix-vector multiplications based on charge-summing memory cell strings. An example in-memory compute device for performing analog multiply-and-accumulate operations on a set of data inputs and a set of weight inputs includes a string of serially connected memory cells formed over a semiconductor channel structure, a source junction controllably connectible to one end of the string of memory cells via a string select switch, a readout circuit including a sense node controllably connectible to one end of the string of memory cells via a charge transfer switch, and control circuitry. The control circuitry is configured to apply pass mode signals, data input signals, and stop signals sequentially according to each memory cell's position along a string. The control circuitry is also configured to enable the string select switch and the charge transfer switch.

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