公开(公告)号：US10910259B2

公开(公告)日：2021-02-02

申请号：US16213119

申请日：2018-12-07

Applicant: TOKYO ELECTRON LIMITED ,  IMEC VZW

Inventor： Koichi Yatsuda ,  Tatsuya Yamaguchi ,  Yannick Feurprier ,  Frederic Lazzarino ,  Jean-Francois de Marneffe ,  Khashayar Babaei Gavan

IPC: H01L21/768 ,  H01L21/311 ,  H01L21/3105

Abstract: A semiconductor device manufacturing method of forming a trench and a via in a porous low dielectric constant film formed on a substrate as an interlayer insulating film, includes: embedding a polymer having a urea bond in pores of the porous low dielectric constant film by supplying a raw material for polymerization to the porous low dielectric constant film; forming the via by etching the porous low dielectric constant film; subsequently, embedding a protective filling material made of an organic substance in the via; subsequently, forming the trench by etching the porous low dielectric constant film; subsequently, removing the protective filling material; and after the forming a trench, removing the polymer from the pores of the porous low dielectric constant film by heating the substrate to depolymerize the polymer, wherein the embedding a polymer having a urea bond in pores is performed before the forming a trench.

公开(公告)号：US20180043283A1

公开(公告)日：2018-02-15

申请号：US15674438

申请日：2017-08-10

Applicant: IMEC VZW

Inventor： Zheng Tao ,  Boon Teik Chan ,  XiuMei Xu ,  Khashayar Babaei Gavan ,  Efrain Altamirano Sanchez

IPC: B01D15/10 ,  B01D53/04

CPC classification number: B01D15/10 ,  B01D53/0407 ,  B01D63/14 ,  B01L3/502753 ,  B01L2300/0896 ,  B81B2201/058 ,  B81B2201/10 ,  B81B2203/0315 ,  B81B2203/0338 ,  B81B2203/0346 ,  B81B2203/0384 ,  B81C1/00119 ,  C12M1/123 ,  C12M33/14

Abstract: A method for producing a structure including, on a main surface of a substrate, at least one elongated cavity having openings at opposing ends. The method includes providing a substrate having a main surface. On the main surface, a first pair of features are formed that protrude perpendicularly from the main surface. The features have elongated sidewalls and a top surface, are parallel to one another, are separated by a gap having a width s1 and a bottom area, and have a width w1 and a height h1. At least the main surface of the substrate and the first pair of features are brought in contact with a liquid, suitable for making a contact angle of less than 90° with the material of the elongated sidewalls and subsequently the substrate is dried.