公开(公告)号：US20230154914A1

公开(公告)日：2023-05-18

申请号：US18055763

申请日：2022-11-15

Applicant: IMEC VZW

Inventor： Gauri Karve ,  Yunlong Li ,  Luc Haspeslagh ,  Philippe Soussan ,  Deniz Sabuncuoglu Tezcan

IPC: H01L25/00 ,  H01L21/56

CPC classification number: H01L25/50 ,  H01L21/561 ,  H01L21/568

Abstract: According to a preferred embodiment of the method of the invention, an assembly is produced comprising a temporary wafer and one or more tiles that are removably attached to the temporary wafer, preferably through a temporary adhesive layer. The tiles comprise a carrier portion and an active material portion. The active material portion is attached to the temporary carrier. The assembly further comprises a single continuous layer of the first material surrounding each of the one or more tiles. Then the back side of the carrier portions of the tiles and of the continuous layer of the first material are simultaneously planarized, and the planarized back sides of the tiles and of the continuous layer of the first material are bonded to a permanent carrier wafer, after which the temporary carrier wafer is removed. The method results in a hybrid wafer comprising a planar top layer formed of the material of the continuous layer with one or more islands embedded therein, the top layer of the islands being formed by the top layer of the active material portion of the one or more tiles.

公开(公告)号：US11282702B2

公开(公告)日：2022-03-22

申请号：US17068785

申请日：2020-10-12

Applicant: IMEC VZW ,  KATHOLIEKE UNIVERSITEIT LEUVEN

Inventor： Philippe Soussan ,  Vasyl Motsnyi ,  Luc Haspeslagh ,  Stefano Guerrieri ,  Olga Syshchyk ,  Bernardette Kunert ,  Robert Langer

IPC: H01L27/00 ,  H01L21/02 ,  H01L29/66

Abstract: The present invent provides a method comprising forming a first wafer comprising a first substrate of a group IV semiconductor, and a group III-V semiconductor device structure formed by selective area epitaxial growth on a surface portion of a front side of the first substrate. The method further comprises forming a second wafer comprising a second substrate of a group IV semiconductor, and a group IV semiconductor device structure formed on a front side of the second substrate, and bonding the first wafer to the second wafer with the front side of the first substrate facing the front side of the second wafer.