公开(公告)号：US20230197761A1

公开(公告)日：2023-06-22

申请号：US18068775

申请日：2022-12-20

Applicant: IMEC VZW

Inventor： Yunlong Li ,  Deniz Sabuncuoglu Tezcan ,  Pawel Malinowski ,  Gauri Karve

IPC: H01L27/146

CPC classification number: H01L27/14687 ,  H01L27/14689 ,  H01L27/14692 ,  H10K39/32

Abstract: An example includes a method for producing a multipixel detector, the method including: providing a bottom layer including a first and a second bottom electrode, depositing an electrically insulating layer on the bottom layer, forming a first opening through the electrically insulating layer, depositing a first photon absorbing material in the first opening, forming a second opening through the electrically insulating layer, depositing a second photon absorbing material in the second opening, planarizing the deposited electrically insulating layer, the first photon absorbing material, and the second photon absorbing material to form a flat surface, and forming a common top electrode on top of the flat surface.

公开(公告)号：US20210384700A1

公开(公告)日：2021-12-09

申请号：US17340351

申请日：2021-06-07

Applicant: IMEC VZW

Inventor： Charles Caer ,  Philippe Soussan ,  Deniz Sabuncuoglu Tezcan ,  Gauri Karve ,  Yunlong Li

IPC: H01S5/026 ,  H01S5/30 ,  H01S5/042

Abstract: The disclosure relates to a method for processing a laser device, for example a III-V on silicon laser, including: providing a carrier substrate; forming a grating structure on the carrier substrate, wherein the grating structure delimits a cavity on a surface of the carrier substrate; placing a die in the cavity and bonding the die to the carrier substrate, wherein the die comprises an active region including a III-V semiconductor material; transferring the die from the carrier substrate to a silicon substrate by bonding an exposed side of the die to the silicon substrate and subsequently debonding the carrier substrate from the die; and forming a photonic structure, for example a silicon waveguide, coupled to the die.

公开(公告)号：US20230154914A1

公开(公告)日：2023-05-18

申请号：US18055763

申请日：2022-11-15

Applicant: IMEC VZW

Inventor： Gauri Karve ,  Yunlong Li ,  Luc Haspeslagh ,  Philippe Soussan ,  Deniz Sabuncuoglu Tezcan

IPC: H01L25/00 ,  H01L21/56

CPC classification number: H01L25/50 ,  H01L21/561 ,  H01L21/568

Abstract: According to a preferred embodiment of the method of the invention, an assembly is produced comprising a temporary wafer and one or more tiles that are removably attached to the temporary wafer, preferably through a temporary adhesive layer. The tiles comprise a carrier portion and an active material portion. The active material portion is attached to the temporary carrier. The assembly further comprises a single continuous layer of the first material surrounding each of the one or more tiles. Then the back side of the carrier portions of the tiles and of the continuous layer of the first material are simultaneously planarized, and the planarized back sides of the tiles and of the continuous layer of the first material are bonded to a permanent carrier wafer, after which the temporary carrier wafer is removed. The method results in a hybrid wafer comprising a planar top layer formed of the material of the continuous layer with one or more islands embedded therein, the top layer of the islands being formed by the top layer of the active material portion of the one or more tiles.