公开(公告)号：US20220199809A1

公开(公告)日：2022-06-23

申请号：US17550383

申请日：2021-12-14

Applicant: IMEC VZW

Inventor： Julien RYCKAERT ,  Naoto HORIGUCHI ,  Boon Teik CHAN

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/08 ,  H01L29/10 ,  H01L21/8234

Abstract: According to an aspect there is provided a FET device. The FET device comprises a common source body portion and a set of source layer prongs protruding therefrom in a first lateral direction. First dielectric layer portions are arranged in spaces between the source layer prongs. The device further comprises a common drain body portion and a set of drain layer prongs protruding in the first lateral direction. Second dielectric layer portions are arranged in spaces between the drain layer prongs. The device further comprises a gate body comprising a common gate body portion and a set of gate prongs protruding therefrom in a second lateral direction opposite the first lateral direction. Each gate prong is formed intermediate a respective pair of first and second dielectric layer portions. The device further comprises a channel region comprising a set of channel layer portions. Each channel layer portion extends between a respective pair of source and drain layer prongs. The channel layer portions are arranged in spaces between the gate prongs. There is also provided a method for forming a FET device.

公开(公告)号：US20170207217A1

公开(公告)日：2017-07-20

申请号：US15382376

申请日：2016-12-16

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven

Inventor： Geert HELLINGS ,  Roman BOSCHKE ,  Dimitri LINTEN ,  Naoto HORIGUCHI

IPC: H01L27/088 ,  H01L29/66 ,  H01L29/417 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/06

CPC classification number: H01L27/0886 ,  H01L21/823431 ,  H01L21/823481 ,  H01L29/0649 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7851

Abstract: The disclosed technology generally relates to semiconductor devices, and more particularly to FinFET transistors. In one aspect, at least three fins are arranged to extend in parallel in a first direction and are laterally separated from each other in a second direction by shallow trench isolation structures having a first fin spacing, where at least a portion of each fin protrudes out from a substrate. At least a portion of each of a first fin and a second fin of the at least three fins vertically protrude to a level higher than an upper surface of the shallow trench isolation structures. A third fin is formed laterally between the first fin and the second fin in the second direction, where the third fin has a non-protruding region which extends vertically to a level below or equal to the upper surface of the shallow trench isolation structures.