公开(公告)号：US20240170559A1

公开(公告)日：2024-05-23

申请号：US18507928

申请日：2023-11-13

Applicant: IMEC VZW

Inventor： Sylvain Baudot ,  Stefan Kubicek ,  Shana Massar

IPC: H01L29/66 ,  H01L29/40 ,  H01L29/51

CPC classification number: H01L29/66977 ,  H01L29/401 ,  H01L29/511 ,  H01L29/6656

Abstract: A method for producing a plurality of mutually parallel mandrel structures of a quantum dot device is provided. The method includes producing mutually parallel mandrel structures on a substrate including at least a top layer of semiconductor material. Side spacers are formed on the mandrel structures, and the mandrel structures are removed with respect to the spacers. The gate oxide of a quantum dot device can be formed in the areas between the spacers, by a thermal oxidation of the semiconductor material of the substrate. The thermal oxidation enables the formation of a gate oxide having low defect density and a constant thickness. The spacer material can be chosen to withstand the thermal oxidation and acts as an insulator between the gate structures.