公开(公告)号：US12027610B2

公开(公告)日：2024-07-02

申请号：US17474175

申请日：2021-09-14

Applicant: IMEC VZW

Inventor： George Eduard Simion ,  Fahd Ayyalil Mohiyaddin ,  Stefan Kubicek ,  Bogdan Govoreanu ,  Florin Ciubotaru ,  Ruoyu Li

IPC: H01L29/66 ,  G06N10/00 ,  H10N50/80 ,  B82Y10/00

CPC classification number: H01L29/66977 ,  G06N10/00 ,  H10N50/80 ,  B82Y10/00

Abstract: According to an aspect of the present inventive concept there is provided a qubit device comprising: a semiconductor substrate layer; a set of control gates configured to define a row of electrostatically confined quantum dots along the substrate layer, each quantum dot being suitable for holding a qubit; and a set of nanomagnets arranged in a row over the substrate layer such that a nanomagnet is arranged above every other quantum dot of the row of quantum dots, wherein each nanomagnet has an out-of-plane magnetization with respect to the substrate layer and wherein every other quantum dot is subjected to an out-of-plane magnetic field generated by a respective nanomagnet, such that a qubit spin resonance frequency of every other quantum dot is shifted with respect to an adjacent quantum dot of the row of quantum dots.

公开(公告)号：US20210391526A1

公开(公告)日：2021-12-16

申请号：US17345827

申请日：2021-06-11

Applicant: IMEC VZW

Inventor： Boon Teik Chan ,  Ruoyu Li ,  Stefan Kubicek ,  Julien Jussot

IPC: H01L39/24 ,  H01L27/18 ,  H01L39/08 ,  H01L39/22

Abstract: A method for processing a semiconductor device with two closely space gates comprises forming a template structure, wherein the template structure includes at least one sub-structure having a dimension less than the CD. The method further comprises forming a gate layer on and around the template structure. Then, the method comprises removing the part of the gate layer formed on the template structure, and patterning the remaining gate layer into a gate structure including the two gates. Further, the method comprises selectively removing the template structure, wherein the spacing between the two gates is formed by the removed sub-structure.

公开(公告)号：US20240170559A1

公开(公告)日：2024-05-23

申请号：US18507928

申请日：2023-11-13

Applicant: IMEC VZW

Inventor： Sylvain Baudot ,  Stefan Kubicek ,  Shana Massar

IPC: H01L29/66 ,  H01L29/40 ,  H01L29/51

CPC classification number: H01L29/66977 ,  H01L29/401 ,  H01L29/511 ,  H01L29/6656

Abstract: A method for producing a plurality of mutually parallel mandrel structures of a quantum dot device is provided. The method includes producing mutually parallel mandrel structures on a substrate including at least a top layer of semiconductor material. Side spacers are formed on the mandrel structures, and the mandrel structures are removed with respect to the spacers. The gate oxide of a quantum dot device can be formed in the areas between the spacers, by a thermal oxidation of the semiconductor material of the substrate. The thermal oxidation enables the formation of a gate oxide having low defect density and a constant thickness. The spacer material can be chosen to withstand the thermal oxidation and acts as an insulator between the gate structures.

公开(公告)号：US20230196166A1

公开(公告)日：2023-06-22

申请号：US18060154

申请日：2022-11-30

Applicant: IMEC VZW

Inventor： Fahd Ayyalil Mohiyaddin ,  Stefan Kubicek ,  Clement Godfrin ,  Bogdan Govoreanu ,  Steven Brebels ,  Ruoyu Li ,  George Eduard Simion

IPC: G06N10/40 ,  G06N10/20 ,  H10N69/00

CPC classification number: G06N10/40 ,  G06N10/20 ,  H10N69/00

Abstract: A qubit device includes first and second linear qubit arrays. Each qubit array includes a semiconductor substrate, control gates configured to define a single row of quantum dots along the substrate, and nanomagnets distributed along the row of quantum dots such that a nanomagnet is arranged at every other pair of quantum dots of the row of quantum dots. Each nanomagnet has an out-of-plane magnetization with respect to the substrate, where the rows of the first and second arrays extend in a common row direction and are separated along a direction transverse to the row direction. The qubit device further includes superconducting resonators connecting pairs of quantum dots between the first and second arrays. Each pair of quantum dots in the first array is configured to couple with a superconducting resonator of the first set to connect with a different pair of quantum dots of the second array.

公开(公告)号：US11638391B2

公开(公告)日：2023-04-25

申请号：US17345827

申请日：2021-06-11

Applicant: IMEC VZW

Inventor： Boon Teik Chan ,  Ruoyu Li ,  Stefan Kubicek ,  Julien Jussot

IPC: H10N60/01 ,  H10N60/10 ,  H10N60/83 ,  H10N69/00

Abstract: A method for processing a semiconductor device with two closely space gates comprises forming a template structure, wherein the template structure includes at least one sub-structure having a dimension less than the CD. The method further comprises forming a gate layer on and around the template structure. Then, the method comprises removing the part of the gate layer formed on the template structure, and patterning the remaining gate layer into a gate structure including the two gates. Further, the method comprises selectively removing the template structure, wherein the spacing between the two gates is formed by the removed sub-structure.