公开(公告)号：US10825868B2

公开(公告)日：2020-11-03

申请号：US16234381

申请日：2018-12-27

Applicant: IMEC vzw

Inventor： Romain Delhougne ,  Davide Francesco Crotti ,  Gouri Sankar Kar ,  Luca Di Piazza ,  Ludovic Goux

IPC: H01L27/24 ,  H01L27/11597 ,  H01L45/00

Abstract: In one aspect, a method for manufacturing a three-dimensional (3D) semiconductor device is disclosed. It includes providing a vertical stack of alternating layers of a first layer type and a second layer type, and providing a first trench and a second trench adjacent the vertical stack. The first trench and the second trench can define a fin. The method further can include recessing the first layer type to form recesses extending into the fin, providing a first electrode in individual ones of the recesses, and providing a second electrode in the first trench and the second trench. The method further can include providing, for individual ones of the recesses, a lateral stack including a memory element, a middle electrode, and a selector element. The lateral stack can extend between the first electrode and the second electrode, thereby forming a memory device.

公开(公告)号：US11260361B2

公开(公告)日：2022-03-01

申请号：US16411811

申请日：2019-05-14

Applicant: IMEC vzw

Inventor： Philippe Vereecken ,  Brecht Put ,  Tim Stakenborg ,  Arnaud Furnemont ,  Luca Di Piazza

IPC: B01J19/00 ,  C25B3/29 ,  C25B9/19 ,  C25B9/70 ,  C01G23/047 ,  C07H21/00 ,  H01B1/12

Abstract: A device for synthesis of macromolecules is disclosed. In one aspect, the device comprises an ion-releaser having a synthesis surface comprising an array of synthesis locations arranged for synthesis of the macromolecules. The ion-releaser also includes an ion-source electrode, which is arranged to contain releasable ions and is arranged to be in contact with each of the synthesis locations of the synthesis surface, thereby release ions to the synthesis locations. The ion-releaser further comprises activating electrodes, which are arranged to be in contact with the ion-source electrode, wherein each one of the activating electrodes is arranged in association with one of the synthesis locations via the ion-source electrode. The ion-releaser is arranged to release at least a portion of the releasable ions from the ion-source electrode to one of the synthesis locations, by activation of the activating electrode associated with the synthesis location.

公开(公告)号：US20190221610A1

公开(公告)日：2019-07-18

申请号：US16234381

申请日：2018-12-27

Applicant: IMEC vzw

Inventor： Romain Delhougne ,  Davide Francesco Crotti ,  Gouri Sankar Kar ,  Luca Di Piazza ,  Ludovic Goux

IPC: H01L27/24 ,  H01L45/00 ,  H01L27/11597

CPC classification number: H01L27/249 ,  H01L27/11597 ,  H01L27/2409 ,  H01L27/2427 ,  H01L45/06 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1683

Abstract: In one aspect, a method for manufacturing a three-dimensional (3D) semiconductor device is disclosed. It includes providing a vertical stack of alternating layers of a first layer type and a second layer type, and providing a first trench and a second trench adjacent the vertical stack. The first trench and the second trench can define a fin. The method further can include recessing the first layer type to form recesses extending into the fin, providing a first electrode in individual ones of the recesses, and providing a second electrode in the first trench and the second trench. The method further can include providing, for individual ones of the recesses, a lateral stack including a memory element, a middle electrode, and a selector element. The lateral stack can extend between the first electrode and the second electrode, thereby forming a memory device.