公开(公告)号：US09991416B2

公开(公告)日：2018-06-05

申请号：US15632127

申请日：2017-06-23

申请人： INDUSTRY FOUNDATION OF CHONNAM NATIONAL UNIVERSITY

发明人： Taeksoo Ji ,  Jinyoung Park ,  Jinhong Lee ,  Wangki Kim ,  Jaesam Shim ,  Kwangjae Lee

IPC分类号： H01L33/04 ,  H01L33/06 ,  H01L33/00 ,  H01L33/32 ,  H01L21/02

CPC分类号： H01L33/04 ,  H01L21/02507 ,  H01L21/0251 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32

摘要： A light emitting diode and a method of manufacturing the light emitting diode are provided. The light emitting diode includes an n-type semiconductor layer, an inclined type superlattice thin film layer, an active layer, and a p-type semiconductor layer. The n-type semiconductor layer is disposed on a substrate. The inclined type superlattice thin film layer is disposed on the n-type semiconductor layer and includes a plurality of thin film pairs in which InGaN thin films and GaN thin films are sequentially stacked. The active layer having a quantum well structure is disposed on the inclined type superlattice thin film layer. The p-type semiconductor layer is disposed on the active layer. Composition ratio of Indium (In) included in the InGaN thin film is increased as getting closer to the active layer. Thus, internal residual strain is reduced, and quantum confinement effect is enhanced, and internal quantum efficiency is increased.