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公开(公告)号:US09958322B2
公开(公告)日:2018-05-01
申请号:US14677300
申请日:2015-04-02
Inventor: Jae Won Hahn
CPC classification number: G01J3/0229 , G01J3/0286 , G01J3/443 , H01J49/0422 , H01J49/068 , H05K9/009
Abstract: A device for a device for preventing the intensity reduction of an optical signal, an optical emission spectrometer, an optical instrument, and a mass spectrometer including the same are provided. The device for preventing the intensity reduction includes a shielding filter which has a mesh structure capable of blocking RF electromagnetic waves radiated from a plasma field for a wafer processing, is installed in the front of an optical window of an optical emission spectrometer for measuring the plasma field from an emission spectrum image of the plasma field, and collects charging particles passing through the mesh.
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公开(公告)号:US12282180B2
公开(公告)日:2025-04-22
申请号:US17647957
申请日:2022-01-13
Inventor: Jae Won Hahn , Hyeon Bo Shim , Ki Wook Han , Joo Kwon Song
Abstract: Disclosed is a stealth device that has a double-band stealth function against millimeter-wavelength electromagnetic waves, has high absorption at a near-infrared laser wavelength, and has low emissivity of mid-infrared light and long-infrared light. The stealth device includes a wavelength-selective absorption pattern layer made of a material having electrical conductivity, wherein the wavelength-selective absorption pattern layer is composed of conductive thin-film patterns capable of causing plasmonic resonance at a first wavelength and a second wavelength different from the first wavelength; and a dielectric layer disposed below the wavelength-selective absorption pattern layer and made of a dielectric material.
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公开(公告)号:US11230086B2
公开(公告)日:2022-01-25
申请号:US16339149
申请日:2017-12-15
Inventor: Jae Won Hahn
Abstract: The present invention relates to an infrared stealth element using a dual band perfect absorption metamaterial. The infrared stealth element includes: a first metal layer; an insulator layer formed on an upper part of the first metal layer; and a second metal layer formed on an upper part of the insulator layer. The second metal layer includes at least one among a metal ring and a metal dot.
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