公开(公告)号：US20180026072A1

公开(公告)日：2018-01-25

申请号：US15659113

申请日：2017-07-25

Applicant: InnoLux Corporation

Inventor： Chih-Hao WU

IPC: H01L27/146

CPC classification number: H01L27/14663 ,  G01T1/2002 ,  H01L27/1214 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/14629 ,  H01L27/14692 ,  H01L29/78669 ,  H01L29/7869

Abstract: An active matrix image sensing device includes an image sensing substrate and a scintillator substrate. The image sensing substrate has a plurality of image sensing pixels. The scintillator substrate is disposed opposite to the image sensing substrate and includes a first substrate, a plurality of guiding members, a reflective layer and a scintillator layer. The guiding members are disposed on the first substrate and protruded from the first substrate toward the image sensing substrate. The guiding members are located corresponding to the image sensing pixels, respectively. The reflective layer is disposed on the guiding members, and the scintillator layer is disposed between the reflective layer and the image sensing substrate.

公开(公告)号：US20150338711A1

公开(公告)日：2015-11-26

申请号：US14669557

申请日：2015-03-26

Applicant: InnoLux Corporation

Inventor： Jung-Fang CHANG ,  Chih-Hao WU ,  Chao-Hsiang WANG ,  Yi-Ching CHEN

IPC: G02F1/1362 ,  G02F1/1368

CPC classification number: H01L29/78696 ,  G02F1/13452 ,  G02F1/136277 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133388 ,  G02F2001/13606 ,  G02F2001/136236 ,  H01L23/538 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1288 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/41733 ,  H01L29/42384 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention relates to a display device, comprising: a substrate comprising a display region and a non-display region surrounding the display region; a first conductive layer disposed on the substrate; a semiconductor layer disposed on the substrate and partially covering the first conductive layer; and a second conductive layer disposed on a top surface of the semiconductor layer; and there is a spacing between a first side of the semiconductor layer and a second side of the second conductive layer from a top view, wherein the first side of the semiconductor layer is adjacent to the second side of the second conductive layer; wherein the spacing in the display region is a first distance, the spacing in the non-display region is a second distance, and the first distance is smaller than the second distance.

Abstract translation: 显示装置技术领域本发明涉及一种显示装置，包括：基板，包括显示区域和围绕所述显示区域的非显示区域; 设置在所述基板上的第一导电层; 半导体层，设置在所述基板上并部分地覆盖所述第一导电层; 以及设置在所述半导体层的顶表面上的第二导电层; 并且从顶视图看，半导体层的第一侧和第二导电层的第二侧之间具有间隔，其中半导体层的第一侧与第二导电层的第二侧相邻; 其中所述显示区域中的间隔是第一距离，所述非显示区域中的间隔是第二距离，并且所述第一距离小于所述第二距离。

公开(公告)号：US20190229146A1

公开(公告)日：2019-07-25

申请号：US16369787

申请日：2019-03-29

Applicant: INNOLUX CORPORATION

Inventor： Chih-Hao WU

IPC: H01L27/146 ,  G01T1/20

Abstract: An active matrix image sensing device includes an image sensing substrate and a scintillator substrate. The image sensing substrate has a plurality of image sensing pixels. The scintillator substrate is disposed opposite to the image sensing substrate and includes a first substrate, a plurality of guiding members, a reflective layer and a scintillator layer. The guiding members are disposed on the first substrate and protruded from the first substrate toward the image sensing substrate. The guiding members are located corresponding to the image sensing pixels, respectively. The reflective layer is disposed on the guiding members, and the scintillator layer is disposed between the reflective layer and the image sensing substrate.

公开(公告)号：US20140151684A1

公开(公告)日：2014-06-05

申请号：US14084878

申请日：2013-11-20

Applicant: InnoLux Corporation

Inventor： Chih-Hao WU

IPC: H01L29/786

CPC classification number: H01L27/1225 ,  G01T1/241 ,  H01L27/124 ,  H01L27/14603 ,  H01L27/14663 ,  H01L31/085

Abstract: An X-ray detector including a thin film transistor (TFT) substrate and a photo-diode array layer is disclosed. Each thin film transistor in the TFT substrate includes: a substrate; a gate-electrode on the substrate; a gate insulating layer on the gate-electrode; a semiconductor layer on the gate insulating layer, wherein a portion of the semiconductor layer covers the gate-electrode; an etching stop layer covering the semiconductor layer; a source-electrode and a drain-electrode respectively disposed on the etching stop layer, wherein the source-electrode and the drain-electrode are respectively electrically connected to the semiconductor layer through conductive via-holes each having a base portion at the semiconductor layer, and at least one of the projection areas of the base portions vertically projected on the substrate has a non-overlapping region beyond the projection area of the gate-electrode vertically projected on the substrate; and a passivation layer covering the source-electrode and the drain-electrode.

Abstract translation: 公开了一种包括薄膜晶体管（TFT）基板和光电二极管阵列层的X射线检测器。 TFT基板中的各薄膜晶体管包括：基板; 基板上的栅电极; 栅电极上的栅极绝缘层; 在所述栅极绝缘层上的半导体层，其中所述半导体层的一部分覆盖所述栅电极; 覆盖半导体层的蚀刻停止层; 分别设置在所述蚀刻停止层上的源电极和漏电极，其中所述源电极和所述漏电极分别通过在所述半导体层处具有基部的导电通孔而与所述半导体层电连接， 并且垂直投影在基板上的基部的投影区域中的至少一个具有超过垂直投影在基板上的栅电极的投影区域的非重叠区域; 以及覆盖源电极和漏电极的钝化层。

公开(公告)号：US20140217399A1

公开(公告)日：2014-08-07

申请号：US14166357

申请日：2014-01-28

Applicant: InnoLux Corporation ,  INNOCOM TECHNOLOGY (SHENZHEN) CO., LTD

Inventor： Chih-Hao WU ,  Cheng-Hsu CHOU

IPC: H01L27/146

CPC classification number: H01L27/14603 ,  G06F1/1626 ,  H01L27/14609 ,  H01L27/14663 ,  H01L27/14665

Abstract: An active matrix image sensing panel comprises a substrate and an image sensing pixel. The image sensing pixel is disposed on the substrate and comprises a scan line, a data line crossing the scan line, a photo sensing element and a TFT element. The photo sensing element includes a first terminal electrode and a second terminal electrode, and the voltage of the first terminal electrode is higher than that of the second terminal electrode. The TFT element includes a first electrode, a second electrode, a first gate electrode and a second gate electrode. The first electrode is electrically connected to the data line, the second electrode is electrically connected to the first terminal electrode, the first gate electrode is electrically connected to the scan line, and the second gate electrode is electrically connected to the first or second terminal electrode. An active matrix image sensing apparatus is also disclosed.

Abstract translation: 有源矩阵图像感测面板包括基板和图像感测像素。 图像感测像素设置在基板上，并且包括扫描线，与扫描线交叉的数据线，感光元件和TFT元件。 感光元件包括第一端子电极和第二端子电极，并且第一端子电极的电压高于第二端子电极的电压。 TFT元件包括第一电极，第二电极，第一栅电极和第二栅电极。 第一电极与数据线电连接，第二电极与第一端子电极电连接，第一栅电极与扫描线电连接，第二栅极电连接到第一或第二端子电极 。 还公开了一种有源矩阵图像感测装置。

公开(公告)号：US20140145085A1

公开(公告)日：2014-05-29

申请号：US14063018

申请日：2013-10-25

Applicant: InnoLux Corporation

Inventor： Chih-Hao WU

IPC: G01T1/20

CPC classification number: G01T1/2018

Abstract: The present invention relates to a flat panel X-ray detector, which comprises a thin film transistor (TFT) substrate; a photoelectric detecting layer, which is disposed on and electrically connected with the TFT substrate, wherein the photoelectric detecting layer comprises a plurality of photoelectric detecting units and a plurality of light absorption units, and the light absorption unit is disposed between spaces adjacent to the photoelectric detecting unit; a Scintillation layer, which is disposed on the photoelectric detecting layer; and a reflective layer, which is disposed on the Scintillation layer.

Abstract translation: 本发明涉及一种平板X射线检测器，它包括薄膜晶体管（TFT）基片; 光电检测层，其设置在TFT基板上并与TFT基板电连接，其中光电检测层包括多个光电检测单元和多个光吸收单元，并且光吸收单元设置在与光电检测单元相邻的空间之间 检测单元 闪烁层，其设置在光电检测层上; 以及设置在闪烁层上的反射层。

公开(公告)号：US20200033485A1

公开(公告)日：2020-01-30

申请号：US16452898

申请日：2019-06-26

Applicant: InnoLux Corporation

Inventor： Chih-Hao WU

IPC: G01T1/20

Abstract: A photodetecting device is provided. The photodetecting device includes an array substrate. The first scan line extends in a first direction. The first data line extends in a second direction, wherein first data line is crossed with the first scan line. The first electronic unit is electrically connected to the first scan line and the first data line. The second electronic unit is adjacent to the first electronic unit and is disposed along the first direction. The third electronic unit is adjacent to the first electronic unit and is disposed along the second direction. The common line transmits a signal to the first electronic unit, the second electronic unit and the third electronic unit. The common line is disposed between the first electronic unit and the second electronic unit, or between the first electronic unit and the third electronic unit.

公开(公告)号：US20190109172A1

公开(公告)日：2019-04-11

申请号：US16109929

申请日：2018-08-23

Applicant: InnoLux Corporation

Inventor： Chih-Hao WU

IPC: H01L27/146 ,  H01L31/115 ,  G01T1/20

Abstract: A detecting device is provided. The detecting device includes a substrate, at least one transistor, at least one detecting element, and a scintillator layer. The transistor is disposed on the substrate. The detecting element is disposed on the transistor and electrically connects to the transistor. The detecting element includes a first electrode layer, a semiconductor layer, and a second electrode layer. The semiconductor layer is disposed on the first electrode layer, and the second electrode layer is disposed on the semiconductor layer. The scintillator layer is disposed on one side of the substrate, wherein at least one corner area of the scintillator layer has a curved structure or a chamfered structure.

公开(公告)号：US20170236950A1

公开(公告)日：2017-08-17

申请号：US15585627

申请日：2017-05-03

Applicant: InnoLux Corporation

Inventor： Jung-Fang CHANG ,  Chih-Hao WU ,  Chao-Hsiang WANG ,  Yi-Ching CHEN

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/417 ,  G02F1/1362 ,  G02F1/1368

CPC classification number: H01L29/78696 ,  G02F1/13452 ,  G02F1/136277 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133388 ,  G02F2001/13606 ,  G02F2001/136236 ,  H01L23/538 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1288 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/41733 ,  H01L29/42384 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A display device is disclosed, which includes: a substrate; a first conductive layer disposed on the substrate and including a gate with a gate edge parallel to a first direction; a semiconductor layer disposed on the first conductive layer; and a second conductive layer disposed on the semiconductor layer and including a drain and a data line extending along the first direction, the second conductive layer electrically connecting to the semiconductor layer, the drain including a drain edge parallel to the first direction, the gate edge located between the data line and the drain edge, and a projection of the drain on the substrate located in a projection of the semiconductor layer on the substrate. Herein, a maximum width of the semiconductor layer overlapping the gate edge along the first direction is smaller than maximum widths thereof overlapping the gate and the drain edge along the first direction.

公开(公告)号：US20130207169A1

公开(公告)日：2013-08-15

申请号：US13761738

申请日：2013-02-07

Applicant: INNOCOM TECHNOLOGY (SHENZHEN), LTD. ,  INNOLUX CORPORATION

Inventor： Chih-Hao WU

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14663

Abstract: An active matrix image sensing panel includes a substrate and an image sensing pixel. The image sensing pixel is disposed on the substrate and includes a data line, a first thin film transistor (TFT) device and a second TFT device. The first TFT device includes a first electrode, a second electrode and a first gate electrode. The second electrode is coupled to the data line through a first via. The second TFT device includes a third electrode, a fourth electrode and a second gate electrode. The fourth electrode is electrically connected to the data line through a second via. The second electrode and the fourth electrode are connected with each other and overlap the data line.

Abstract translation: 有源矩阵图像感测面板包括基板和图像感测像素。 图像感测像素设置在基板上并且包括数据线，第一薄膜晶体管（TFT）器件和第二TFT器件。 第一TFT器件包括第一电极，第二电极和第一栅电极。 第二电极通过第一通孔耦合到数据线。 第二TFT器件包括第三电极，第四电极和第二栅电极。 第四电极通过第二通孔电连接到数据线。 第二电极和第四电极彼此连接并与数据线重叠。