Abstract:
The electronic device includes a substrate; an active layer disposed above the first substrate; a first signal line disposed above the substrate and overlapped with the active layer; and a conductive pattern disposed above the substrate. The conductive pattern includes a first side extending in a first direction, a second side extending in the first direction, and a third side connected between the first side and the second side, and wherein the third side includes a part that the part is not parallel to the first direction and not perpendicular to the first direction, and the part is located out of the first signal line and overlapped with the active layer.
Abstract:
An electronic device is provided. The electronic device includes a substrate, an optical sensing element, a light-shielding structure, and a microlens. The substrate has a normal direction. The optical sensing element is disposed on the substrate. The light-shielding structure is disposed on the optical sensing element and includes a plurality of light-shielding layers. Each light-shielding layer includes an opening, and centers of the openings are arranged along a first direction and separated from each other. The microlens is disposed on the light-shielding layers and overlaps the opening of the uppermost light-shielding layer. The microlens guides light into an optical channel formed by the openings, so that the optical sensing element has a maximum response value for light with an incident angle that is greater than or equal to 10 degrees and less than or equal to 30 degrees relative to the normal direction.
Abstract:
An electronic device is provided. The electronic device includes a sensing device. The sensing device includes an anti-reflection unit, a circuit layer and a light-sensing element. The circuit layer includes a thin-film transistor and is disposed on the anti-reflection unit. The light-sensing element is disposed on the circuit layer and is electrically connected to the thin-film transistor.
Abstract:
A sensing device includes a substrate, a first circuit, a second circuit, a first photodetector, and a second photodetector. The substrate has a sensing region. The first circuit is disposed on the substrate and in the sensing region, and configured to sense a fingerprint. The second circuit is disposed on the substrate and in the sensing region, and configured to sense a living body. The first photodetector is electrically connected to the first circuit. The second photodetector is electrically connected to the second circuit. The area of the second photodetector is larger than the area of the first photodetector.
Abstract:
An optical sensing device is disclosed. The optical sensing device includes a sensing pixel, a driving circuit and a first light shielding layer. The sensing pixel includes a sensing circuit and a sensing element electrically connected to the sensing circuit. The driving circuit is electrically connected to the sensing circuit. The first light shielding layer includes at least one first opening corresponding to the sensing element, and the first light shielding layer is overlapped with the driving circuit in a top-view direction of the optical sensing device.
Abstract:
A sensing device includes a plurality of sensing sets having a plurality of lenses and a plurality of sensing units. The sensing units are configured to collect reflected light which pass through the lenses. Each sensing set adopts a structure which includes one sensing unit and multiple lenses for providing fingerprint sensing with high accuracy.
Abstract:
The present invention discloses a low temperature poly-silicon thin film transistor, a manufacturing method thereof, and a display device. Particularly, a metal film is formed between source and drain electrodes and a first conductive layer, and the metal film reacts with the poly-silicon of the source and drain electrodes to form metal silicide, whereby activating the source and drain electrodes at a low temperature. As such, the temperature of the manufacturing process of low temperature poly-silicon thin film transistor can be confined to 350° C. or lower.
Abstract:
A sensing device is provided. The sensing device includes a substrate, a circuit layer, a photosensitive element, a light-shielding layer, and a conductive layer. The circuit layer is disposed on the substrate. The photosensitive element is disposed on the substrate and is electrically connected to the circuit layer. The light-shielding layer is disposed on the photosensitive element and has an opening. The opening overlaps the photosensitive element. The conductive layer is disposed on the light-shielding layer. In addition, the conductive layer passes through the opening and is electrically connected to the photosensitive element. A method of manufacturing a sensing device is also provided.
Abstract:
A sensing device is provided. The sensing device includes a sensing circuit, a plurality of sensing elements, and a plurality of light-collecting elements. The light-collecting elements are for collecting lights to the plurality of sensing elements. The plurality of sensing elements are configured to generate a plurality of sensing signals according to the lights that are collected, and output the plurality of sensing signals as a whole to the sensing circuit.
Abstract:
An electronic device is provided. The electronic device includes multiple transducer pixels. Each of the transducer pixels includes a sonic transducer, a demultiplexer electrically connected to the sonic transducer, a driving line electrically connected to the sonic transducer, a switching line electrically connected to the demultiplexer, and a reading line electrically connected to the demultiplexer. The driving line is used to provide a driving signal to the sonic transducer to emit sonic waves. The switching line is used to turn on the demultiplexer to output the sensing signal received by the sonic transducer to the reading line.