公开(公告)号：US11935860B2

公开(公告)日：2024-03-19

申请号：US16828651

申请日：2020-03-24

Applicant: Intel Corporation

Inventor： Morten Jensen ,  Michael Ryan ,  Srikant Nekkanty ,  Joe F. Walczyk

IPC: H01L23/00 ,  H01R12/71 ,  H01R13/24

CPC classification number: H01L24/32 ,  H01L24/67 ,  H01R12/714 ,  H01R13/2421 ,  H01R13/2485 ,  H01R13/2492

Abstract: An interconnect that has an electrically conductive layer, where a first and second insulator layers are coupled with the conductive layer. A region of the conductive layer includes an opening of a portion of the first insulator layer the second insulator layer that are adjacent to the region. An electrical connector of a first device is electrically coupled to a portion of the region on a first side of the conductive layer and an electrical conductor of a second device is electrically coupled with a portion of the region on the second side. Also, an interconnect coupled with a substrate that includes a cylinder extending from a side of the substrate with a plate coupled at the end of the cylinder with an opening that includes two or more tabs of the plate extending into the opening to receive a connector.

公开(公告)号：US20200371155A1

公开(公告)日：2020-11-26

申请号：US16417408

申请日：2019-05-20

Applicant: INTEL CORPORATION

Inventor： Joe F. Walczyk ,  James Hastings ,  Morten Jensen ,  Todd Coons

IPC: G01R31/28

Abstract: An apparatus for testing integrated circuits (ICs), comprising a first thermal contact structure having a first surface to interface with a heat source, the first surface is opposite a second surface. A second thermal contact structure is above the first thermal contact structure and separated therefrom. The second thermal contact structure has a third surface to interface with a cold mass. The third surface is opposite a fourth surface, and the fourth surface is opposite the second surface. A variable-resistance thermal interface (VRTI) structure is between the first and second thermal contact structures. The VRTI structure has a maximal thermal conductivity associated with a first state, and a minimal thermal conductivity associated with a second state.

公开(公告)号：US11592472B2

公开(公告)日：2023-02-28

申请号：US16417408

申请日：2019-05-20

Applicant: INTEL CORPORATION

Inventor： Joe F. Walczyk ,  James Hastings ,  Morten Jensen ,  Todd Coons

IPC: G01R31/28

Abstract: An apparatus for testing integrated circuits (ICs) , includes a first thermal contact structure having a first surface to interface with a heat source and an opposing second surface to interface with a device under test (DUT). A second thermal contact structure is above the first thermal contact structure and separated therefrom by a variable-resistance thermal interface (VRTI) structure operable to couple or decouple the first and second thermal contact structures from one another. The VRTI structure has a maximal thermal conductivity associated with a first state, and a minimal thermal conductivity associated with a second state.