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    Techniques for trench isolation using flowable dielectric materials
    1.
    发明授权
    Techniques for trench isolation using flowable dielectric materials 有权
    使用可流动电介质材料进行沟槽隔离的技术

    公开(公告)号：US09406547B2

    公开(公告)日：2016-08-02

    申请号：US14139964

    申请日：2013-12-24

    Applicant: INTEL CORPORATION

    Inventor： Ritesh Jhaveri ,  Jeanne L. Luce ,  Sang-Won Park ,  Dennis G. Hanken

    IPC: H01L21/76 ,  H01L21/762 ,  H01L29/06 ,  H01L29/78 ,  H01L29/66

    CPC classification number: H01L21/76224 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/02323 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/02345 ,  H01L21/823431 ,  H01L27/0924 ,  H01L29/0649 ,  H01L29/66795 ,  H01L29/785

    Abstract: Techniques are disclosed for providing trench isolation of semiconductive fins using flowable dielectric materials. In accordance with some embodiments, a flowable dielectric can be deposited over a fin-patterned semiconductive substrate, for example, using a flowable chemical vapor deposition (FCVD) process. The flowable dielectric may be flowed into the trenches between neighboring fins, where it can be cured in situ, thereby forming a dielectric layer over the substrate, in accordance with some embodiments. Through curing, the flowable dielectric can be converted, for example, to an oxide, a nitride, and/or a carbide, as desired for a given target application or end-use. In some embodiments, the resultant dielectric layer may be substantially defect-free, exhibiting no or an otherwise reduced quantity of seams/voids. After curing, the resultant dielectric layer can undergo wet chemical, thermal, and/or plasma treatment, for instance, to modify at least one of its dielectric properties, density, and/or etch rate.

    Abstract translation: 公开了用于使用可流动介电材料提供半导体翅片的沟槽隔离的技术。 根据一些实施例，可流动电介质可以例如使用可流动的化学气相沉积（FCVD）工艺沉积在鳍状图案化的半导体衬底上。 可流动电介质可以流入相邻散热片之间的沟槽，其中它可以原位固化，从而根据一些实施例在衬底上形成电介质层。 通过固化，可以根据给定目标应用或最终用途的需要将可流动电介质转化为例如氧化物，氮化物和/或碳化物。 在一些实施例中，所得到的电介质层可以是基本上无缺陷的，没有或以其他方式减少接缝/空隙的量。 在固化之后，所得到的介电层可进行湿化学，热和/或等离子体处理，例如改变其介电特性，密度和/或蚀刻速率中的至少一个。

    Techniques for trench isolation using flowable dielectric materials
    3.
    发明授权
    Techniques for trench isolation using flowable dielectric materials 有权

    公开(公告)号：US10147634B2

    公开(公告)日：2018-12-04

    申请号：US15224987

    申请日：2016-08-01

    Applicant: INTEL CORPORATION

    Inventor： Ritesh Jhaveri ,  Jeanne L. Luce ,  Sang-Won Park ,  Dennis G. Hanken

    IPC: H01L21/762 ,  H01L29/06 ,  H01L27/092 ,  H01L29/78 ,  H01L29/66 ,  H01L21/02 ,  H01L21/8234

    Abstract: Techniques are disclosed for providing trench isolation of semiconductive fins using flowable dielectric materials. In accordance with some embodiments, a flowable dielectric can be deposited over a fin-patterned semiconductive substrate, for example, using a flowable chemical vapor deposition (FCVD) process. The flowable dielectric may be flowed into the trenches between neighboring fins, where it can be cured in situ, thereby forming a dielectric layer over the substrate, in accordance with some embodiments. Through curing, the flowable dielectric can be converted, for example, to an oxide, a nitride, and/or a carbide, as desired for a given target application or end-use. In some embodiments, the resultant dielectric layer may be substantially defect-free, exhibiting no or an otherwise reduced quantity of seams/voids. After curing, the resultant dielectric layer can undergo wet chemical, thermal, and/or plasma treatment, for instance, to modify at least one of its dielectric properties, density, and/or etch rate.

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