公开(公告)号：US09754821B2

公开(公告)日：2017-09-05

申请号：US15141522

申请日：2016-04-28

Applicant: INTEL CORPORATION

Inventor： Sean King ,  Hui Jae Yoo ,  Sreenivas Kosaraju ,  Timothy Glassman

IPC: H01L21/47 ,  H01L21/82 ,  H01L21/768 ,  H01L21/02 ,  H01L23/522 ,  H01L23/532 ,  H01L23/00

CPC classification number: H01L21/76831 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76877 ,  H01L23/522 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/53295 ,  H01L23/564 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a PECVD process for a thinner contiguous hermetic diffusion barrier. In further embodiments, the diffusion barrier is a multi-layered film including a high-k dielectric layer and a low-k or intermediate-k dielectric layer (e.g., a bi-layer) to reduce the dielectric constant of the diffusion barrier. In other embodiments a silicate of a high-k dielectric layer (e.g., a metal silicate) is formed to lower the k-value of the diffusion barrier by adjusting the silicon content of the silicate while maintaining high film conformality and density.

公开(公告)号：US11587827B2

公开(公告)日：2023-02-21

申请号：US17567762

申请日：2022-01-03

Applicant: Intel Corporation

Inventor： Sean King ,  Hui Jae Yoo ,  Sreenivas Kosaraju ,  Timothy Glassman

IPC: H01L21/76 ,  H01L23/52 ,  H01L21/02 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/00

Abstract: Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a PECVD process for a thinner contiguous hermetic diffusion barrier. In further embodiments, the diffusion barrier is a multi-layered film including a high-k dielectric layer and a low-k or intermediate-k dielectric layer (e.g., a bi-layer) to reduce the dielectric constant of the diffusion barrier. In other embodiments a silicate of a high-k dielectric layer (e.g., a metal silicate) is formed to lower the k-value of the diffusion barrier by adjusting the silicon content of the silicate while maintaining high film conformality and density.

公开(公告)号：US20220415818A1

公开(公告)日：2022-12-29

申请号：US17358962

申请日：2021-06-25

Applicant: Intel Corporation

Inventor： Carl Naylor ,  Jasmeet Chawla ,  Matthew Metz ,  Sean King ,  Ramanan Chebiam ,  Mauro Kobrinsky ,  Scott Clendenning ,  Sudarat Lee ,  Christopher Jezewski ,  Sunny Chugh ,  Jeffery Bielefeld

IPC: H01L23/532 ,  H01L21/3215 ,  H01L21/768

Abstract: Integrated circuitry interconnect structures comprising a first metal and a graphene cap over a top surface of the first metal. Within the interconnect structure an amount of a second metal, nitrogen, or silicon is greater proximal to an interface of the graphene cap. The presence of the second metal, nitrogen, or silicon may improve adhesion of the graphene to the first metal and/or otherwise improve electromigration resistance of a graphene capped interconnect structure. The second metal, nitrogen, or silicon may be introduced into the first metal during deposition of the first metal, or during a post-deposition treatment of the first metal. The second metal, nitrogen, or silicon may be introduced prior to, or after, capping the first metal with graphene.

公开(公告)号：US10529619B2

公开(公告)日：2020-01-07

申请号：US16538666

申请日：2019-08-12

Applicant: Intel Corporation

Inventor： Sean King ,  Hui Jae Yoo ,  Sreenivas Kosaraju ,  Timothy Glassman

IPC: H01L21/76 ,  H01L23/52 ,  H01L21/02 ,  H01L21/768 ,  H01L23/532 ,  H01L23/522 ,  H01L23/00

Abstract: Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a PECVD process for a thinner contiguous hermetic diffusion barrier. In further embodiments, the diffusion barrier is a multi-layered film including a high-k dielectric layer and a low-k or intermediate-k dielectric layer (e.g., a bi-layer) to reduce the dielectric constant of the diffusion barrier. In other embodiments a silicate of a high-k dielectric layer (e.g., a metal silicate) is formed to lower the k-value of the diffusion barrier by adjusting the silicon content of the silicate while maintaining high film conformality and density.

公开(公告)号：US09935002B2

公开(公告)日：2018-04-03

申请号：US15686047

申请日：2017-08-24

Applicant: Intel Corporation

Inventor： Sean King ,  Hui Jae Yoo ,  Sreenivas Kosaraju ,  Timothy Glassman

IPC: H01L21/47 ,  H01L21/76 ,  H01L21/02 ,  H01L21/768 ,  H01L23/00 ,  H01L23/532 ,  H01L23/522

CPC classification number: H01L21/76831 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76877 ,  H01L23/522 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/53295 ,  H01L23/564 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a PECVD process for a thinner contiguous hermetic diffusion barrier. In further embodiments, the diffusion barrier is a multi-layered film including a high-k dielectric layer and a low-k or intermediate-k dielectric layer (e.g., a bi-layer) to reduce the dielectric constant of the diffusion barrier. In other embodiments a silicate of a high-k dielectric layer (e.g., a metal silicate) is formed to lower the k-value of the diffusion barrier by adjusting the silicon content of the silicate while maintaining high film conformality and density.

公开(公告)号：US12040226B2

公开(公告)日：2024-07-16

申请号：US18137334

申请日：2023-04-20

Applicant: Intel Corporation

Inventor： Sean King ,  Hui Jae Yoo ,  Sreenivas Kosaraju ,  Timothy Glassman

IPC: H01L21/76 ,  H01L21/02 ,  H01L21/768 ,  H01L23/00 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/76831 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76877 ,  H01L23/522 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/53295 ,  H01L23/564 ,  H01L2924/0002 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a PECVD process for a thinner contiguous hermetic diffusion barrier. In further embodiments, the diffusion barrier is a multi-layered film including a high-k dielectric layer and a low-k or intermediate-k dielectric layer (e.g., a bi-layer) to reduce the dielectric constant of the diffusion barrier. In other embodiments a silicate of a high-k dielectric layer (e.g., a metal silicate) is formed to lower the k-value of the diffusion barrier by adjusting the silicon content of the silicate while maintaining high film conformality and density.

公开(公告)号：US11670545B2

公开(公告)日：2023-06-06

申请号：US17855656

申请日：2022-06-30

Applicant: Intel Corporation

Inventor： Sean King ,  Hui Jae Yoo ,  Sreenivas Kosaraju ,  Timothy Glassman

IPC: H01L21/76 ,  H01L23/52 ,  H01L21/02 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/00

CPC classification number: H01L21/76831 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02178 ,  H01L21/7682 ,  H01L21/76802 ,  H01L21/76829 ,  H01L21/76877 ,  H01L23/522 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/53295 ,  H01L23/564 ,  H01L2924/0002 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a PECVD process for a thinner contiguous hermetic diffusion barrier. In further embodiments, the diffusion barrier is a multi-layered film including a high-k dielectric layer and a low-k or intermediate-k dielectric layer (e.g., a bi-layer) to reduce the dielectric constant of the diffusion barrier. In other embodiments a silicate of a high-k dielectric layer (e.g., a metal silicate) is formed to lower the k-value of the diffusion barrier by adjusting the silicon content of the silicate while maintaining high film conformality and density.

公开(公告)号：US10763161B2

公开(公告)日：2020-09-01

申请号：US16702233

申请日：2019-12-03

Applicant: Intel Corporation

Inventor： Sean King ,  Hui Jae Yoo ,  Sreenivas Kosaraju ,  Timothy Glassman

IPC: H01L21/76 ,  H01L23/52 ,  H01L21/02 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/00

Abstract: Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a PECVD process for a thinner contiguous hermetic diffusion barrier. In further embodiments, the diffusion barrier is a multi-layered film including a high-k dielectric layer and a low-k or intermediate-k dielectric layer (e.g., a bi-layer) to reduce the dielectric constant of the diffusion barrier. In other embodiments a silicate of a high-k dielectric layer (e.g., a metal silicate) is formed to lower the k-value of the diffusion barrier by adjusting the silicon content of the silicate while maintaining high film conformality and density.

公开(公告)号：US11251076B2

公开(公告)日：2022-02-15

申请号：US16940004

申请日：2020-07-27

Applicant: Intel Corporation

Inventor： Sean King ,  Hui Jae Yoo ,  Sreenivas Kosaraju ,  Timothy Glassman

IPC: H01L21/76 ,  H01L23/52 ,  H01L21/02 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/00

Abstract: Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a PECVD process for a thinner contiguous hermetic diffusion barrier. In further embodiments, the diffusion barrier is a multi-layered film including a high-k dielectric layer and a low-k or intermediate-k dielectric layer (e.g., a bi-layer) to reduce the dielectric constant of the diffusion barrier. In other embodiments a silicate of a high-k dielectric layer (e.g., a metal silicate) is formed to lower the k-value of the diffusion barrier by adjusting the silicon content of the silicate while maintaining high film conformality and density.

公开(公告)号：US10438844B2

公开(公告)日：2019-10-08

申请号：US15926870

申请日：2018-03-20

Applicant: Intel Corporation

Inventor： Sean King ,  Hui Jae Yoo ,  Sreenivas Kosaraju ,  Timothy Glassman

IPC: H01L21/76 ,  H01L23/52 ,  H01L21/02 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/00

Abstract: Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a PECVD process for a thinner contiguous hermetic diffusion barrier. In further embodiments, the diffusion barrier is a multi-layered film including a high-k dielectric layer and a low-k or intermediate-k dielectric layer (e.g., a bi-layer) to reduce the dielectric constant of the diffusion barrier. In other embodiments a silicate of a high-k dielectric layer (e.g., a metal silicate) is formed to lower the k-value of the diffusion barrier by adjusting the silicon content of the silicate while maintaining high film conformality and density.