公开(公告)号：US20140124860A1

公开(公告)日：2014-05-08

申请号：US13670768

申请日：2012-11-07

Applicant: INTERNATIONAL BUSINESS MACHINES CORP

Inventor： Kangguo Cheng ,  Veeraraghavan S. Basker ,  Bruce B. Doris ,  Ali Khakifirooz ,  Kern Rim

IPC: H01L29/78 ,  H01L21/20

CPC classification number: H01L27/1211 ,  H01L21/845 ,  H01L29/66795 ,  H01L29/785

Abstract: Methods and structures for forming a localized silicon-on-insulator (SOI) finFET are disclosed. Fins are formed on a bulk substrate. Nitride spacers protect the fin sidewalls. A shallow trench isolation region is deposited over the fins. An oxidation process causes oxygen to diffuse through the shallow trench isolation region and into the underlying silicon. The oxygen reacts with the silicon to form oxide, which provides electrical isolation for the fins. The shallow trench isolation region is in direct physical contact with the fins and/or the nitride spacers that are disposed on the fins.

Abstract translation: 公开了用于形成局部绝缘体上硅（SOI）finFET的方法和结构。 翅片形成在块状基底上。 氮化物间隔件保护翅片侧壁。 浅沟槽隔离区域沉积在鳍片上。 氧化过程导致氧气扩散通过浅沟槽隔离区域并进入下面的硅。 氧与硅反应形成氧化物，为散热片提供电气隔离。 浅沟槽隔离区域与布置在鳍片上的翅片和/或氮化物间隔物直接物理接触。