公开(公告)号：US20140167163A1

公开(公告)日：2014-06-19

申请号：US13716646

申请日：2012-12-17

申请人： INTERNATIONAL BUSINESS MACHINES CORP

发明人： Kangguo Cheng ,  Ali Khakifirooz ,  Alexander Reznicek ,  Raghavasimhan Sreenivasan ,  Thomas N. Adam

IPC分类号： H01L29/78 ,  H01L29/66

CPC分类号： H01L29/66477 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/41791 ,  H01L29/785

摘要： Embodiments include multi-fin finFET structures with epitaxially-grown merged source/drains and methods of forming the same. Embodiments may include an epitaxial insulator layer above a base substrate, a gate structure above the epitaxial insulator layer, a semiconductor fin below the gate structure, and an epitaxial source/drain region grown on the epitaxial insulator layer adjacent to an end of the semiconductor fin. The epitaxial insulator layer may be made of an epitaxial rare earth oxide material grown on a base semiconductor substrate. Embodiments may further include fin extension regions on the end of the semiconductor fin between the end of the end of the semiconductor fin and the epitaxial source/drain region. In some embodiments, the end of the semiconductor fin may be recessed below the gate structure.

摘要翻译： 实施例包括具有外延生长的合并源/排水管的多翅片finFET结构及其形成方法。 实施例可以包括在基底基板上方的外延绝缘体层，外延绝缘体层上方的栅极结构，栅极结构下方的半导体鳍片以及在外延绝缘体层上生长的与半导体鳍片的端部相邻的外延源极/漏极区域 。 外延绝缘体层可以由生长在基底半导体衬底上的外延稀土氧化物材料制成。 实施例还可以包括在半导体鳍片的端部的端部和外延源极/漏极区域之间的半导体鳍片的端部上的翅片延伸区域。 在一些实施例中，半导体鳍片的端部可以凹入门结构下方。

公开(公告)号：US20140117462A1

公开(公告)日：2014-05-01

申请号：US13664873

申请日：2012-10-31

申请人： INTERNATIONAL BUSINESS MACHINES CORP

发明人： Kangguo Cheng ,  Ali Khakifirooz ,  Shom Ponoth ,  Ragvahasimhan Sreenivasan

IPC分类号： H01L29/78 ,  H01L21/762

CPC分类号： H01L29/7851 ,  H01L21/76224 ,  H01L29/66803 ,  H01L29/66818

摘要： An improved bulk FinFET with a punchthrough stopper region, and method of fabrication are disclosed. The dopants used to form the punchthrough stopper are supplied from a shallow trench isolation liner. An anneal diffuses the dopants from the shallow trench isolation liner into the bulk substrate and lower portion of the fins, to form the punchthrough stopper region.

摘要翻译： 公开了一种具有穿通阻挡区域的改进的体积FinFET和制造方法。 用于形成穿通止动件的掺杂剂由浅沟槽隔离衬垫提供。 退火将掺杂剂从浅沟槽隔离衬里扩散到散装衬底和散热片的下部，以形成穿透阻止区域。

公开(公告)号：US20140124860A1

公开(公告)日：2014-05-08

申请号：US13670768

申请日：2012-11-07

申请人： INTERNATIONAL BUSINESS MACHINES CORP

发明人： Kangguo Cheng ,  Veeraraghavan S. Basker ,  Bruce B. Doris ,  Ali Khakifirooz ,  Kern Rim

IPC分类号： H01L29/78 ,  H01L21/20

CPC分类号： H01L27/1211 ,  H01L21/845 ,  H01L29/66795 ,  H01L29/785

摘要： Methods and structures for forming a localized silicon-on-insulator (SOI) finFET are disclosed. Fins are formed on a bulk substrate. Nitride spacers protect the fin sidewalls. A shallow trench isolation region is deposited over the fins. An oxidation process causes oxygen to diffuse through the shallow trench isolation region and into the underlying silicon. The oxygen reacts with the silicon to form oxide, which provides electrical isolation for the fins. The shallow trench isolation region is in direct physical contact with the fins and/or the nitride spacers that are disposed on the fins.

摘要翻译： 公开了用于形成局部绝缘体上硅（SOI）finFET的方法和结构。 翅片形成在块状基底上。 氮化物间隔件保护翅片侧壁。 浅沟槽隔离区域沉积在鳍片上。 氧化过程导致氧气扩散通过浅沟槽隔离区域并进入下面的硅。 氧与硅反应形成氧化物，为散热片提供电气隔离。 浅沟槽隔离区域与布置在鳍片上的翅片和/或氮化物间隔物直接物理接触。