公开(公告)号：US20040130434A1

公开(公告)日：2004-07-08

申请号：US10336992

申请日：2003-01-06

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Anil K. Chinthakindi ,  Shwu-Jen Jeng ,  Michael F. Lofaro ,  Christopher M. Schnabel ,  Kenneth J. Stein

IPC: H01C001/012

CPC classification number: H01L28/20 ,  H01L23/5223 ,  H01L27/0802 ,  H01L27/0805 ,  H01L28/40 ,  H01L2924/0002 ,  Y10S438/97 ,  Y10T29/49082 ,  Y10T29/49155 ,  H01L2924/00

Abstract: A method is disclosed of fabricating a MIMCAP (a capacitor (CAP) formed by successive layers of metal, insulator, metal (MIM)) and a thin film resistor at the same level. A method is also disclosed of fabricating a MIMCAP and a thin film resistor at the same level, and a novel integration scheme for BEOL (back-end-of-line processing) thin film resistors which positions them closer to FEOL (front-end-of-line processing) devices.

Abstract translation: 公开了制造MIMCAP（由金属，绝缘体，金属（MIM）的连续层形成的电容器（CAP））和同一水平的薄膜电阻器的方法。 还公开了制造相同水平的MIMCAP和薄膜电阻器的方法，以及用于BEOL（后端处理）薄膜电阻器的新颖的集成方案，使它们更接近FEOL（前端 - 线上处理）设备。