公开(公告)号：US20150056777A1

公开(公告)日：2015-02-26

申请号：US14528435

申请日：2014-10-30

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Mattias E. DAHLSTROM ,  Dinh DANG ,  Qizhi LIU ,  Ramana M. MALLADI

IPC: H01L29/66 ,  H01L23/367 ,  H01L21/762 ,  H01L23/373 ,  H01L21/306 ,  H01L21/308

CPC classification number: H01L29/66242 ,  H01L21/30604 ,  H01L21/308 ,  H01L21/76224 ,  H01L21/763 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/373 ,  H01L29/0821 ,  H01L29/7371 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of making a semiconductor structure includes forming a trench through a shallow trench isolation (STI) structure and into a substrate, and forming a liner including an electrical insulator material on sidewalls of the trench. The method also includes forming a core including a high thermal conductivity material in the trench and on the liner, and forming a cap in the trench and on the core.

Abstract translation: 制造半导体结构的方法包括通过浅沟槽隔离（STI）结构形成沟槽并且形成衬底，以及在沟槽的侧壁上形成包括电绝缘体材料的衬垫。 该方法还包括在沟槽和衬垫上形成包括高导热性材料的芯，并在沟槽和芯上形成帽。

公开(公告)号：US20130214384A1

公开(公告)日：2013-08-22

申请号：US13832929

申请日：2013-03-15

Applicant: International Business Machines Corporation

Inventor： Alan B. BOTULA ,  Dinh DANG ,  James S. DUNN ,  Alvin J. JOSEPH ,  Peter J. LINDGREN

IPC: H01L21/762 ,  H01L29/06

CPC classification number: H01L21/76283 ,  H01L21/76289 ,  H01L27/0738 ,  H01L27/1203 ,  H01L29/0649

Abstract: A low harmonic radio-frequency (RF) switch in a silicon-on-insulator (SOI) substrate and methods of manufacture. A method includes forming at least one trench through an insulator layer. The at least one trench is adjacent a device formed in an active region on the insulator layer. The method also includes forming at least one cavity in a substrate under the insulator layer and extending laterally from the at least one trench to underneath the device.

Abstract translation: 绝缘体上硅（SOI）衬底中的低谐波射频（RF）开关及其制造方法。 一种方法包括通过绝缘体层形成至少一个沟槽。 所述至少一个沟槽与形成在所述绝缘体层上的有源区域中的器件相邻。 该方法还包括在绝缘体层之下的衬底中形成至少一个空腔，并从该至少一个沟槽横向延伸到该器件的下方。