公开(公告)号：US20140131800A1

公开(公告)日：2014-05-15

申请号：US13676817

申请日：2012-11-14

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Alan B. Botula ,  Mark D. Jaffe ,  Alvin J. Joseph ,  Richard A. Phelps ,  James Slinkman ,  Randy L. Wolf

IPC: H01L21/66 ,  H01L29/16

CPC classification number: H01L29/0603 ,  H01L21/26513 ,  H01L21/7624 ,  H01L21/84 ,  H01L22/14 ,  H01L22/20 ,  H01L27/1203 ,  H01L29/16 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A silicon device includes an active silicon layer, a buried oxide (BOX) layer beneath the active silicon layer and a high-resistivity silicon layer beneath the BOX layer. The device also includes a harmonic suppression layer at a boundary of the BOX layer and the high-resistivity silicon layer.

公开(公告)号：US20140306325A1

公开(公告)日：2014-10-16

申请号：US14313444

申请日：2014-06-24

Applicant: International Business Machines Corporation

Inventor： Alan B. Botula ,  Mark D. Jaffe ,  Alvin J. Joseph ,  Richard A. Phelps ,  James Slinkman ,  Randy L. Wolf

IPC: H01L29/06

CPC classification number: H01L29/0603 ,  H01L21/26513 ,  H01L21/7624 ,  H01L21/84 ,  H01L22/14 ,  H01L22/20 ,  H01L27/1203 ,  H01L29/16 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A silicon device includes an active silicon layer, a buried oxide (BOX) layer beneath the active silicon layer and a high-resistivity silicon layer beneath the BOX layer. The device also includes a harmonic suppression layer at a boundary of the BOX layer and the high-resistivity silicon layer.

Abstract translation: 硅器件包括有源硅层，有源硅层下面的掩埋氧化物（BOX）层和BOX层下面的高电阻率硅层。 该装置还包括在BOX层和高电阻率硅层的边界处的谐波抑制层。

公开(公告)号：US08828746B2

公开(公告)日：2014-09-09

申请号：US13676817

申请日：2012-11-14

Applicant: International Business Machines Corporation

Inventor： Alan B. Botula ,  Mark D. Jaffe ,  Alvin J. Joseph ,  Richard A. Phelps ,  James Slinkman ,  Randy L. Wolf

IPC: H01L21/02

CPC classification number: H01L29/0603 ,  H01L21/26513 ,  H01L21/7624 ,  H01L21/84 ,  H01L22/14 ,  H01L22/20 ,  H01L27/1203 ,  H01L29/16 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A silicon device includes an active silicon layer, a buried oxide (BOX) layer beneath the active silicon layer and a high-resistivity silicon layer beneath the BOX layer. The device also includes a harmonic suppression layer at a boundary of the BOX layer and the high-resistivity silicon layer.

Abstract translation: 硅器件包括有源硅层，有源硅层下面的掩埋氧化物（BOX）层和BOX层下面的高电阻率硅层。 该装置还包括在BOX层和高电阻率硅层的边界处的谐波抑制层。