公开(公告)号：US20250157886A1

公开(公告)日：2025-05-15

申请号：US18507181

申请日：2023-11-13

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Ruilong Xie ,  Jianwei Peng ,  Shay Reboh ,  Brent A. Anderson ,  Nicholas Alexander POLOMOFF

IPC: H01L23/48 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/06 ,  H01L29/08 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: A semiconductor component includes a backside contact. The semiconductor component further includes two inactive transistor gates each associated with a region of source/drain material of a respective transistor. The region of source/drain material of at least one of the transistors is in direct contact with the backside contact. The semiconductor component further includes a diffusion break formed between the two inactive transistor gates and made of a dielectric material. The diffusion break extends from a lowermost surface that is substantially coplanar with a lowermost surface of the backside contact to an uppermost surface that is substantially coplanar with an uppermost surface of the region of source/drain material of at least one of the inactive transistor gates.