公开(公告)号：US20190013244A1

公开(公告)日：2019-01-10

申请号：US16114816

申请日：2018-08-28

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Kangguo CHENG ,  Lawrence A. CLEVENGER ,  Balasubramanian S. PRANATHARTHIHARAN ,  John ZHANG

IPC: H01L21/8234 ,  H01L29/786 ,  H01L21/02 ,  H01L29/775 ,  H01L29/66 ,  H01L29/423 ,  H01L29/40 ,  H01L29/08 ,  H01L29/06 ,  H01L27/088 ,  H01L21/306 ,  H01L29/78

Abstract: A semiconductor device includes a first gate stack arranged about a first nanowire and a second nanowire, the first nanowire is arranged above a second nanowire, the first nanowire is connected to a first source/drain region and a second source/drain region. A second gate stack is arranged about a third nanowire and a fourth nanowire, the third nanowire is arranged above a fourth nanowire, the third nanowire is connected to a third source/drain region and a fourth source/drain region. An insulator layer having a first thickness is arranged adjacent to the first gate stack.