公开(公告)号：US20190296181A1

公开(公告)日：2019-09-26

申请号：US15935635

申请日：2018-03-26

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Ning Li ,  Kevin Han ,  William T. Spratt ,  Stephen W. Bedell ,  Devendra Sadana ,  Ghavam G. Shahidi

IPC: H01L31/18 ,  H01L31/077 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/0224 ,  H01L31/0216

Abstract: A semiconductor structure for optical power conversion and a method of forming the semiconductor structure are provided. In an aspect, the method may include removing a first portion of the semiconductor structure from a first region, wherein the semiconductor structure comprises a layered photovoltaic structure on a silicon-on-insulator structure. A second portion of the semiconductor structure may be removed from a second region, wherein the second region is located adjacent to the first region, and wherein an insulator layer of the silicon-on-insulator structure is exposed by the removed second portion. A passivation layer pattern may be formed over the semiconductor structure. Electrodes may be formed on portions of the surfaces of the semiconductor structure that are uncovered by the passivation layer.

公开(公告)号：US10804428B2

公开(公告)日：2020-10-13

申请号：US16194177

申请日：2018-11-16

Applicant: International Business Machines Corporation

Inventor： Ning Li ,  Kevin Han ,  Devendra K Sadana

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/08 ,  C30B25/02 ,  H01L33/14 ,  H01L33/30 ,  H01L33/10

Abstract: The present invention is a small, highly efficient, Low Power-Light Emitting Diode (LP-LED) that operates at low power, currents, and voltages. The LP-LED has a first and second cladding layer with a narrow emissions layer disposed between. A valence quantum well and a conduction quantum well form within the emissions layer. Materials are chosen so that either the valence quantum well or the conduction quantum well has a potential depth much larger than the other quantum well. In some preferred embodiments, the cladding material is chosen to have a low non-radiative recombination rate.

公开(公告)号：US20200161501A1

公开(公告)日：2020-05-21

申请号：US16194177

申请日：2018-11-16

Applicant: International Business Machines Corporation

Inventor： Ning Li ,  Kevin Han ,  Devendra K. Sadana

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/08 ,  H01L33/10 ,  H01L33/14 ,  H01L33/30 ,  C30B25/02

Abstract: The present invention is a small, highly efficient, Low Power-Light Emitting Diode (LP-LED) that operates at low power, currents, and voltages. The LP-LED has a first and second cladding layer with a narrow emissions layer disposed between. A valence quantum well and a conduction quantum well form within the emissions layer. Materials are chosen so that either the valence quantum well or the conduction quantum well has a potential depth much larger than the other quantum well. In some preferred embodiments, the cladding material is chosen to have a low non-radiative recombination rate.