公开(公告)号：US09989467B2

公开(公告)日：2018-06-05

申请号：US15432696

申请日：2017-02-14

Applicant: International Business Machines Corporation

Inventor： Yann A. N. Astier ,  Ning Li ,  Devendra K. Sadana ,  Joshua T. Smith ,  William T. Spratt

IPC: H01L31/16 ,  G01N21/64 ,  G02B6/132 ,  H01L33/32 ,  G02B6/122 ,  G02B6/12 ,  H01L33/00 ,  H01L31/0304 ,  H01L27/14 ,  H01L27/15

CPC classification number: G01N21/6454 ,  B01L3/502707 ,  B01L3/502715 ,  B01L2300/0654 ,  G01N15/1436 ,  G01N15/1459 ,  G01N15/1484 ,  G01N21/6428 ,  G01N21/645 ,  G01N2015/1006 ,  G01N2021/6439 ,  G01N2021/6482 ,  G01N2201/0873 ,  G02B6/12004 ,  G02B6/122 ,  G02B6/131 ,  G02B6/132 ,  G02B6/136 ,  G02B2006/12078 ,  G02B2006/12123 ,  H01L27/14 ,  H01L27/15 ,  H01L31/03044 ,  H01L31/16 ,  H01L33/007 ,  H01L33/32

Abstract: A semiconductor structure includes a first optical waveguide and a second optical waveguide located on a sapphire substrate. The first optical waveguide and the second optical waveguide each include a core portion of gallium nitride (GaN), and a cladding layer laterally surrounding the core portion. The cladding layer includes a material having a refractive index less than a refractive index of the sapphire substrate.

公开(公告)号：US09812605B2

公开(公告)日：2017-11-07

申请号：US15352921

申请日：2016-11-16

Applicant: International Business Machines Corporation

Inventor： Yann Astier ,  Huan Hu ,  Ning Li ,  Devendra K. Sadana ,  Joshua T. Smith ,  William T. Spratt

IPC: H01L31/173 ,  H01L31/105 ,  H01L33/00 ,  H01L31/0216 ,  B01L3/00

CPC classification number: H01L31/173 ,  B01L3/502715 ,  B01L3/502761 ,  B01L2200/0652 ,  B01L2200/10 ,  B01L2300/0627 ,  B01L2300/12 ,  G01N15/1436 ,  G01N15/1484 ,  G01N21/6428 ,  G01N33/54306 ,  G01N33/54373 ,  G01N2015/0065 ,  G01N2201/062 ,  H01L27/156 ,  H01L31/02164 ,  H01L31/035227 ,  H01L31/105 ,  H01L31/125 ,  H01L31/167 ,  H01L31/18 ,  H01L33/0012 ,  H01L33/18 ,  H01L33/20 ,  H01L33/58

Abstract: In one example, a device includes a trench formed in a substrate. The trench includes a first end and a second end that are non-collinear. A first plurality of semiconductor pillars is positioned near the first end of the trench and includes integrated light sources. A second plurality of semiconductor pillars is positioned near the second end of the trench and includes integrated photodetectors.

公开(公告)号：US20170205350A1

公开(公告)日：2017-07-20

申请号：US15432719

申请日：2017-02-14

Applicant: International Business Machines Corporation

Inventor： Yann A. N. Astier ,  Ning Li ,  Devendra K. Sadana ,  Joshua T. Smith ,  William T. Spratt

IPC: G01N21/64 ,  G02B6/132 ,  G02B6/13 ,  H01L31/16 ,  G02B6/12 ,  H01L33/32 ,  H01L33/00 ,  H01L31/0304 ,  G02B6/136 ,  G02B6/122

CPC classification number: G01N21/6454 ,  B01L3/502707 ,  B01L3/502715 ,  B01L2300/0654 ,  G01N15/1436 ,  G01N15/1459 ,  G01N15/1484 ,  G01N21/6428 ,  G01N21/645 ,  G01N2015/1006 ,  G01N2021/6439 ,  G01N2021/6482 ,  G01N2201/0873 ,  G02B6/12004 ,  G02B6/122 ,  G02B6/131 ,  G02B6/132 ,  G02B6/136 ,  G02B2006/12078 ,  G02B2006/12123 ,  H01L27/14 ,  H01L27/15 ,  H01L31/03044 ,  H01L31/16 ,  H01L33/007 ,  H01L33/32

Abstract: A method of forming a semiconductor structure includes forming a first optical waveguide and a second optical waveguide on a sapphire substrate. The first optical waveguide and the second optical waveguide each include a core portion of gallium nitride (GaN), and a cladding layer laterally surrounding the core portion. The cladding layer includes a material having a refractive index less than a refractive index of the sapphire substrate. The method further includes etching a portion of the cladding layer to form a microfluidic channel therein and forming a capping layer on a top surface of the first optical waveguide, the second optical waveguide and the microfluidic channel.

公开(公告)号：US09588289B1

公开(公告)日：2017-03-07

申请号：US15002041

申请日：2016-01-20

Applicant: International Business Machines Corporation

Inventor： Yann A. N. Astier ,  Ning Li ,  Devendra K. Sadana ,  Joshua T. Smith ,  William T. Spratt

IPC: G02B6/13 ,  G02B6/12 ,  G02B6/136 ,  G02B6/132

CPC classification number: G01N21/6454 ,  B01L3/502707 ,  B01L3/502715 ,  B01L2300/0654 ,  G01N15/1436 ,  G01N15/1459 ,  G01N15/1484 ,  G01N21/6428 ,  G01N21/645 ,  G01N2015/1006 ,  G01N2021/6439 ,  G01N2021/6482 ,  G01N2201/0873 ,  G02B6/12004 ,  G02B6/122 ,  G02B6/131 ,  G02B6/132 ,  G02B6/136 ,  G02B2006/12078 ,  G02B2006/12123 ,  H01L27/14 ,  H01L27/15 ,  H01L31/03044 ,  H01L31/16 ,  H01L33/007 ,  H01L33/32

Abstract: A method of forming a semiconductor structure includes forming a first optical waveguide and a second optical waveguide on a sapphire substrate. The first optical waveguide and the second optical waveguide each include a core portion of gallium nitride (GaN), and a cladding layer laterally surrounding the core portion. The cladding layer includes a material having a refractive index less than a refractive index of the sapphire substrate. The method further includes etching a portion of the cladding layer to form a microfluidic channel therein and forming a capping layer on a top surface of the first optical waveguide, the second optical waveguide and the microfluidic channel.

Abstract translation: 形成半导体结构的方法包括在蓝宝石衬底上形成第一光波导和第二光波导。 第一光波导和第二光波导均包括氮化镓（GaN）的核心部分和横向包围核心部分的包层。 包覆层包括折射率小于蓝宝石衬底的折射率的材料。 该方法还包括蚀刻包层的一部分以在其中形成微流体通道，并在第一光波导，第二光波导和微流体通道的顶表面上形成覆盖层。

公开(公告)号：US20190296181A1

公开(公告)日：2019-09-26

申请号：US15935635

申请日：2018-03-26

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Ning Li ,  Kevin Han ,  William T. Spratt ,  Stephen W. Bedell ,  Devendra Sadana ,  Ghavam G. Shahidi

IPC: H01L31/18 ,  H01L31/077 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/0224 ,  H01L31/0216

Abstract: A semiconductor structure for optical power conversion and a method of forming the semiconductor structure are provided. In an aspect, the method may include removing a first portion of the semiconductor structure from a first region, wherein the semiconductor structure comprises a layered photovoltaic structure on a silicon-on-insulator structure. A second portion of the semiconductor structure may be removed from a second region, wherein the second region is located adjacent to the first region, and wherein an insulator layer of the silicon-on-insulator structure is exposed by the removed second portion. A passivation layer pattern may be formed over the semiconductor structure. Electrodes may be formed on portions of the surfaces of the semiconductor structure that are uncovered by the passivation layer.

公开(公告)号：US10254226B2

公开(公告)日：2019-04-09

申请号：US15264360

申请日：2016-09-13

Applicant: International Business Machines Corporation

Inventor： Ning Li ,  Devendra K. Sadana ,  William T. Spratt

IPC: G01N21/17 ,  G01N21/64

Abstract: A fluorescence detection system is provided. The fluorescence detection system includes a light source adapted to emit excitation light; a sample unit in which a sample is disposed; a first optical fiber adapted to connect the light source to the sample unit; an avalanche photodiode array detector adapted to receive fluorescent light generated by the sample when the sample is irradiated with the excitation light; and a second optical fiber adapted to connect the sample unit to the avalanche photodiode array detector, wherein the second optical fiber has a numerical aperture of equal to or greater than about 0.15 and the second optical fiber is positioned such that a longitudinal axis of the second optical fiber is orthogonal to a longitudinal axis of the first optical fiber. A method for detecting fluorescence and a computer-implemented method for detecting fluorescence are also provided.

公开(公告)号：US10107803B2

公开(公告)日：2018-10-23

申请号：US15244484

申请日：2016-08-23

Applicant: International Business Machines Corporation

Inventor： Yann Astier ,  Huan Hu ,  Ning Li ,  Devendra K. Sadana ,  Joshua T. Smith ,  William T. Spratt

IPC: B01L3/00 ,  G01N15/14 ,  G01N21/64 ,  G01N33/543 ,  G01N15/00

Abstract: In one example, a device includes a trench formed in a substrate. The trench includes a first end and a second end that are non-collinear. A first plurality of semiconductor pillars is positioned near the first end of the trench and includes integrated light sources. A second plurality of semiconductor pillars is positioned near the second end of the trench and includes integrated photodetectors.

公开(公告)号：US09958390B2

公开(公告)日：2018-05-01

申请号：US15362259

申请日：2016-11-28

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Yann Astier ,  Stephen W. Bedell ,  Ning Li ,  Devendra K. Sadana ,  William T. Spratt ,  Chao Wang

IPC: G01N21/64 ,  H01L31/0216 ,  H01L31/0232 ,  H01L31/0304 ,  H01L25/16 ,  H01L31/18 ,  H01L31/036 ,  G01N15/14 ,  G01N21/05 ,  B01L3/00 ,  G01N15/10 ,  G01N15/00

CPC classification number: G01N21/6428 ,  B01L3/502707 ,  B01L3/502715 ,  B01L2200/12 ,  B01L2300/168 ,  G01N15/1436 ,  G01N15/1459 ,  G01N21/05 ,  G01N21/645 ,  G01N2015/0065 ,  G01N2015/1006 ,  G01N2021/6439 ,  G01N2021/6471 ,  G01N2201/06113 ,  G01N2201/062 ,  G01N2201/08 ,  H01L25/167 ,  H01L31/02162 ,  H01L31/02164 ,  H01L31/02322 ,  H01L31/03044 ,  H01L31/036 ,  H01L31/1856

Abstract: A semiconductor device used for fluorescent-based molecule detection and a method for manufacturing the same are provided. The semiconductor device has a fluid channel layer defining a fluid channel through which a sample stream flows. A target cell coupled with a fluorescent source is contained by the sample stream. The semiconductor device also has an excitation light source for generating excitation light that reaches the target cell coupled with the fluorescent source to generate fluorescent light. The semiconductor device also has a light filter layer for permitting the fluorescent light to pass through and to block the excitation light and a light detection layer for detecting the fluorescent light. The functional components of the device are highly integrated. Leakage of the excitation light and background noise into the light detection component can be minimized to improve the quality of detection.

公开(公告)号：US09735305B2

公开(公告)日：2017-08-15

申请号：US14859961

申请日：2015-09-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Ning Li ,  Devendra K. Sadana ,  William T. Spratt

IPC: G01N21/64 ,  H01S5/026 ,  H01L31/0232 ,  H01L31/173 ,  H01L33/00 ,  H01L33/32 ,  H01L31/18 ,  B01L3/00 ,  H01L31/12 ,  H01L25/16 ,  H01L21/02 ,  H01L27/15 ,  H01L27/144 ,  H01L21/365 ,  H01L21/44 ,  H01L21/465 ,  C12Q1/68

CPC classification number: H01L31/173 ,  B01L3/5027 ,  B01L3/502707 ,  C12Q1/6872 ,  G01N21/645 ,  G01N2021/6471 ,  H01L21/02392 ,  H01L21/02395 ,  H01L25/167 ,  H01L27/1443 ,  H01L27/15 ,  H01L31/02327 ,  H01L31/125 ,  H01L31/184 ,  H01L33/0062 ,  H01L33/0075 ,  H01L33/30 ,  H01L33/32 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62 ,  H01S5/0262 ,  H01S5/0264

Abstract: After sequentially forming a first multilayer structure comprising a first set of semiconductor layers suitable for formation of a photodetector, an etch stop layer and a second multilayer structure comprising a second set of semiconductor layers suitable for formation of a light source over a substrate, the second multilayer structure is patterned to form a light source in a first region of the substrate. A first trench is then formed extending through the etch stop layer and the first multilayer structure to separate the first multilayer structure into a first part located underneath the light source and a second part that defines a photodetector located in a second region of the substrate. Next, an interlevel dielectric (ILD) layer is formed over the light source, the photodetector and the substrate. A second trench that defines a microfluidic channel is formed within the ILD layer and above the photodetector.

公开(公告)号：US20170084775A1

公开(公告)日：2017-03-23

申请号：US14859961

申请日：2015-09-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Ning Li ,  Devendra K. Sadana ,  William T. Spratt

IPC: H01L31/173 ,  H01L33/00 ,  H01L31/18 ,  H01L33/32 ,  H01L31/0232

CPC classification number: H01L31/173 ,  B01L3/5027 ,  B01L3/502707 ,  C12Q1/6872 ,  G01N21/645 ,  G01N2021/6471 ,  H01L21/02392 ,  H01L21/02395 ,  H01L25/167 ,  H01L27/1443 ,  H01L27/15 ,  H01L31/02327 ,  H01L31/125 ,  H01L31/184 ,  H01L33/0062 ,  H01L33/0075 ,  H01L33/30 ,  H01L33/32 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62 ,  H01S5/0262 ,  H01S5/0264

Abstract: After sequentially forming a first multilayer structure comprising a first set of semiconductor layers suitable for formation of a photodetector, an etch stop layer and a second multilayer structure comprising a second set of semiconductor layers suitable for formation of a light source over a substrate, the second multilayer structure is patterned to form a light source in a first region of the substrate. A first trench is then formed extending through the etch stop layer and the first multilayer structure to separate the first multilayer structure into a first part located underneath the light source and a second part that defines a photodetector located in a second region of the substrate. Next, an interlevel dielectric (ILD) layer is formed over the light source, the photodetector and the substrate. A second trench that defines a microfluidic channel is formed within the ILD layer and above the photodetector.