公开(公告)号：US20160111447A1

公开(公告)日：2016-04-21

申请号：US14514900

申请日：2014-10-15

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Andres BRYANT ,  Brian J. GREENE ,  Jeffrey B. JOHNSON ,  Mickey H. YU

IPC: H01L27/12 ,  H01L29/161 ,  H01L29/16 ,  H01L21/84 ,  H01L21/02

CPC classification number: H01L27/1211 ,  H01L21/02428 ,  H01L21/02532 ,  H01L21/845 ,  H01L29/16 ,  H01L29/161 ,  H01L29/66795 ,  H01L29/785

Abstract: Merged fin structures for finFET devices and methods of manufacture are disclosed. The method of forming the structure includes forming a plurality of fin structures on an insulator layer. The method further includes forming a faceted structure on adjacent fin structures of the plurality of fin structures. The method further includes spanning a gap between the faceted structures on the adjacent fin structures with a semiconductor material.

Abstract translation: 公开了FinFET器件的合并翅片结构和制造方法。 形成结构的方法包括在绝缘体层上形成多个翅片结构。 该方法还包括在多个翅片结构的相邻翅片结构上形成刻面结构。 该方法还包括利用半导体材料跨越相邻翅片结构上的小平面结构之间的间隙。