公开(公告)号：US12300615B2

公开(公告)日：2025-05-13

申请号：US18056393

申请日：2022-11-17

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Mukta Ghate Farooq ,  Qianwen Chen ,  Shahid Butt ,  Eric Perfecto ,  Michael P. Belyansky ,  Katsuyuki Sakuma ,  John Knickerbocker

IPC: H01L23/535 ,  B32B43/00 ,  H01L21/683 ,  H01L23/522 ,  H01L23/528

Abstract: A stack structure that includes: a device wafer, a handler wafer, and a bonding structure disposed between the device wafer and the handler wafer, wherein one or both of the device wafer and the handler wafer have a release layer that is configured to be substantially or completely vaporized by infrared ablation when exposed to an infrared laser energy. The device wafer includes at least two consecutive layers adjacent the bonding structure that together include a plurality of fill portions that substantially or completely disable entry of the infrared laser energy into a plurality of layers of the device wafer below the two consecutive layers adjacent the bonding structure.

公开(公告)号：US20240170288A1

公开(公告)日：2024-05-23

申请号：US18056393

申请日：2022-11-17

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Mukta Ghate Farooq ,  Qianwen Chen ,  Shahid Butt ,  Eric Perfecto ,  Michael P. Belyansky ,  Katsuyuki Sakuma ,  John Knickerbocker

IPC: H01L21/027 ,  H01L23/528 ,  H01L23/535

CPC classification number: H01L21/0275 ,  H01L23/5286 ,  H01L23/535

Abstract: A stack structure that includes: a device wafer, a handler wafer, and a bonding structure disposed between the device wafer and the handler wafer, wherein one or both of the device wafer and the handler wafer have a release layer that is configured to be substantially or completely vaporized by infrared ablation when exposed to an infrared laser energy. The device wafer includes at least two consecutive layers adjacent the bonding structure that together include a plurality of fill portions that substantially or completely disable entry of the infrared laser energy into a plurality of layers of the device wafer below the two consecutive layers adjacent the bonding structure.