公开(公告)号：US20240191341A1

公开(公告)日：2024-06-13

申请号：US18537523

申请日：2023-12-12

Applicant: INTEVAC, INC.

Inventor： Samuel D. Harkness, IV ,  Thomas P. Nolan ,  Stephen M. Daly ,  Jae Ha Choi ,  Zachary Lyons ,  Jim Sullivan ,  Mike Anthony ,  Todd Morimoto

IPC: C23C14/35 ,  C23C14/50 ,  C23C14/56

CPC classification number: C23C14/352 ,  C23C14/50 ,  C23C14/568

Abstract: A plasma chamber for physical vapor deposition, having an anode aperture shield that reduces the field of view to the substrate for deposition particles from the sputtering target. The anode aperture shield limits the deposition particles reaching the substrate to selected maximum angles from the vertical, and rejects particles approaching with a larger angle from the vertical. The node aperture shield is grounded and may be constructed of an upper plate and a lower plate spaced apart from the upper plate, wherein the upper plate may include perforations or may incorporate an electron filter.