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公开(公告)号:US20240191341A1
公开(公告)日:2024-06-13
申请号:US18537523
申请日:2023-12-12
Applicant: INTEVAC, INC.
Inventor: Samuel D. Harkness, IV , Thomas P. Nolan , Stephen M. Daly , Jae Ha Choi , Zachary Lyons , Jim Sullivan , Mike Anthony , Todd Morimoto
CPC classification number: C23C14/352 , C23C14/50 , C23C14/568
Abstract: A plasma chamber for physical vapor deposition, having an anode aperture shield that reduces the field of view to the substrate for deposition particles from the sputtering target. The anode aperture shield limits the deposition particles reaching the substrate to selected maximum angles from the vertical, and rejects particles approaching with a larger angle from the vertical. The node aperture shield is grounded and may be constructed of an upper plate and a lower plate spaced apart from the upper plate, wherein the upper plate may include perforations or may incorporate an electron filter.
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公开(公告)号:US20240191342A1
公开(公告)日:2024-06-13
申请号:US18534479
申请日:2023-12-08
Applicant: INTEVAC, INC.
Inventor: Samuel D. Harkness, IV , Thomas P. Nolan , Stephen M. Daly , Mike Anthony , Todd Morimoto
Abstract: Embodiments of a substrate carrier are described. The substrate carrier includes a carrier tray having a deposition surface and a set of pedestal positions on the deposition surface. In some embodiments, the set comprises an N×M array of pedestal positions with N≥1 and M≥1. Each pedestal position is adapted to receive a corresponding substrate pedestal, and each pedestal has a working surface adapted to receive a substrate. One or more adjusters are positioned in a corresponding pedestal position. The adjuster can adjust a distance between the deposition surface and the working surface, an angular orientation of the working surface relative to the deposition surface, or both.
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