SUBSTRATE CARRIER FOR THIN FILM PROCESSING
    2.
    发明公开

    公开(公告)号:US20240191342A1

    公开(公告)日:2024-06-13

    申请号:US18534479

    申请日:2023-12-08

    Applicant: INTEVAC, INC.

    CPC classification number: C23C14/50 C23C14/34

    Abstract: Embodiments of a substrate carrier are described. The substrate carrier includes a carrier tray having a deposition surface and a set of pedestal positions on the deposition surface. In some embodiments, the set comprises an N×M array of pedestal positions with N≥1 and M≥1. Each pedestal position is adapted to receive a corresponding substrate pedestal, and each pedestal has a working surface adapted to receive a substrate. One or more adjusters are positioned in a corresponding pedestal position. The adjuster can adjust a distance between the deposition surface and the working surface, an angular orientation of the working surface relative to the deposition surface, or both.

    ADJUSTABLE MULTIPLE FILAMENT ION BEAM DEPOSITION SYSTEM

    公开(公告)号:US20250087441A1

    公开(公告)日:2025-03-13

    申请号:US18367839

    申请日:2023-09-13

    Applicant: INTEVAC, INC.

    Inventor: Thomas P. Nolan

    Abstract: A chemical vapor deposition chamber including a vacuum chamber; a power source; a gas conduit coupling the vacuum chamber to a precursor gas source; a filament arrangement energized by the power source to thereby impart thermal energy to molecules of precursor gas flowing from the precursor gas source; a coupling mechanism; wherein the filament arrangement comprises a plurality of filaments and the coupling mechanism electrically coupling the power source only to a subset of the plurality of filaments at any given time, while remaining filaments are not energized.

    METHOD AND APPARATUS FOR UNIFORM HIGH THROUGHPUT MULTIPLE LAYER FILMS

    公开(公告)号:US20240194455A1

    公开(公告)日:2024-06-13

    申请号:US18537692

    申请日:2023-12-12

    Applicant: INTEVAC, INC.

    CPC classification number: H01J37/32449 H01J37/32981

    Abstract: Method for operating a plasma processing system by setting first process recipes for first station specifying initial gas flow rate, a change point, and a subsequent gas flow rate; setting second process recipes for second station specifying second gas flow rate; setting an initial estimate for gas leakage from the first station into the second station through the transport opening; and calculating a gas flow change for the second station using the initial gas flow rate and the subsequent gas flow rate of the first station, and the initial estimate; executing plasma processing simultaneously in the first station and the second station according to the first process recipe, the second process recipe and the gas flow change.

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