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公开(公告)号:US20240201422A1
公开(公告)日:2024-06-20
申请号:US18391113
申请日:2023-12-20
Applicant: INTEVAC, INC.
CPC classification number: G02B1/14 , C23C14/0676 , C23C14/352 , G02B1/11
Abstract: A coated article comprising: a transparent substrate and a protective coating comprising: an adhesion layer formed over the substrate; a protective layer formed over the adhesion layer and may have refractive index of from 1.6 to 1.8; and an anti-reflective layer formed over the protective layer, the anti-reflective layer comprises a plurality of sublayers, wherein at least one sublayer has a refractive index higher than index of said protective layer and at least one sublayer has a refractive index lower than the index of said protective layer.
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公开(公告)号:US20240191342A1
公开(公告)日:2024-06-13
申请号:US18534479
申请日:2023-12-08
Applicant: INTEVAC, INC.
Inventor: Samuel D. Harkness, IV , Thomas P. Nolan , Stephen M. Daly , Mike Anthony , Todd Morimoto
Abstract: Embodiments of a substrate carrier are described. The substrate carrier includes a carrier tray having a deposition surface and a set of pedestal positions on the deposition surface. In some embodiments, the set comprises an N×M array of pedestal positions with N≥1 and M≥1. Each pedestal position is adapted to receive a corresponding substrate pedestal, and each pedestal has a working surface adapted to receive a substrate. One or more adjusters are positioned in a corresponding pedestal position. The adjuster can adjust a distance between the deposition surface and the working surface, an angular orientation of the working surface relative to the deposition surface, or both.
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公开(公告)号:US20250087441A1
公开(公告)日:2025-03-13
申请号:US18367839
申请日:2023-09-13
Applicant: INTEVAC, INC.
Inventor: Thomas P. Nolan
IPC: H01J37/08 , C23C16/48 , C23C16/52 , H01J37/317
Abstract: A chemical vapor deposition chamber including a vacuum chamber; a power source; a gas conduit coupling the vacuum chamber to a precursor gas source; a filament arrangement energized by the power source to thereby impart thermal energy to molecules of precursor gas flowing from the precursor gas source; a coupling mechanism; wherein the filament arrangement comprises a plurality of filaments and the coupling mechanism electrically coupling the power source only to a subset of the plurality of filaments at any given time, while remaining filaments are not energized.
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公开(公告)号:US20240258087A1
公开(公告)日:2024-08-01
申请号:US18535774
申请日:2023-12-11
Applicant: INTEVAC, INC.
Inventor: Samuel D. Harkness, IV , Thomas P. Nolan , Jae Ha Choi , Alexander Vassilievich Demtchouk , Terry Bluck
CPC classification number: H01J37/3452 , C23C14/35 , C23C14/50 , H01J37/3423 , H01J2237/002 , H01J2237/332
Abstract: Sputtering system having cylindrical target with sputtering material on exterior surface; magnet arrangement inside the cylindrical target, having first set of magnets arranged on straight row, each having first pole facing interior wall of the target and second pole facing away from the interior wall, second set having plurality of magnets arranged in obround shape around the first set, each magnet having first pole facing away from the interior wall and second pole facing the interior wall; a keeper plate between the first set of magnets and the second set of magnets, such that straight line passing through an axis connecting the first pole and the second pole of a magnet from the second set intercepts the keeper plate prior to reaching the interior wall; and a cover.
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公开(公告)号:US20240194455A1
公开(公告)日:2024-06-13
申请号:US18537692
申请日:2023-12-12
Applicant: INTEVAC, INC.
Inventor: Thomas P. Nolan , Zachary Lyons , Uy Le
IPC: H01J37/32
CPC classification number: H01J37/32449 , H01J37/32981
Abstract: Method for operating a plasma processing system by setting first process recipes for first station specifying initial gas flow rate, a change point, and a subsequent gas flow rate; setting second process recipes for second station specifying second gas flow rate; setting an initial estimate for gas leakage from the first station into the second station through the transport opening; and calculating a gas flow change for the second station using the initial gas flow rate and the subsequent gas flow rate of the first station, and the initial estimate; executing plasma processing simultaneously in the first station and the second station according to the first process recipe, the second process recipe and the gas flow change.
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公开(公告)号:US20240191341A1
公开(公告)日:2024-06-13
申请号:US18537523
申请日:2023-12-12
Applicant: INTEVAC, INC.
Inventor: Samuel D. Harkness, IV , Thomas P. Nolan , Stephen M. Daly , Jae Ha Choi , Zachary Lyons , Jim Sullivan , Mike Anthony , Todd Morimoto
CPC classification number: C23C14/352 , C23C14/50 , C23C14/568
Abstract: A plasma chamber for physical vapor deposition, having an anode aperture shield that reduces the field of view to the substrate for deposition particles from the sputtering target. The anode aperture shield limits the deposition particles reaching the substrate to selected maximum angles from the vertical, and rejects particles approaching with a larger angle from the vertical. The node aperture shield is grounded and may be constructed of an upper plate and a lower plate spaced apart from the upper plate, wherein the upper plate may include perforations or may incorporate an electron filter.
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公开(公告)号:US20240194464A1
公开(公告)日:2024-06-13
申请号:US18529106
申请日:2023-12-05
Applicant: INTEVAC, INC.
Inventor: Samuel D. Harkness, IV , Thomas P. Nolan , Stephen M. Daly
IPC: H01J37/34
CPC classification number: H01J37/3438 , H01J37/3452 , H01J37/3461 , H01J37/3405 , H01J2237/3323
Abstract: An anode for a plasma chamber, having an anode block having a front surface to face a plasma and a rear surface to face away from the plasma; a magnet positioned within the anode block and generating magnetic field lines extending outwardly from the front surface of the anode block; and an electron filter bar spaced apart and extending over the front surface of the anode block and intercepting at least part of the magnetic field lines.
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