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公开(公告)号：US09257582B2
公开(公告)日：2016-02-09
申请号：US14456214
申请日：2014-08-11
IPC分类号： H01L29/06 , H01L31/00 , H01L31/0352 , B82Y20/00 , B82Y30/00 , H01L31/032 , H01L31/0384 , H01L31/07
CPC分类号： H01L51/4213 , B82Y20/00 , B82Y30/00 , H01L31/0322 , H01L31/0324 , H01L31/0352 , H01L31/0384 , H01L31/07 , H01L51/0046 , H01L51/0084 , H01L51/441 , Y02E10/541 , Y02P70/521
摘要： A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.
摘要翻译： 描述复合材料。 复合材料包括半导体纳米晶体和钝化半导体纳米晶体表面的有机分子。 有机分子的一个或多个性质有助于半导体纳米晶体之间的电荷转移。 描述了包括包括半导体纳米晶体的p型半导体材料的半导体材料。 半导体材料的至少一种性质导致半导体材料中的电子的迁移率大于或等于空穴的迁移率。 描述了包括包括半导体纳米晶体的n型半导体材料的半导体材料。 半导体材料的至少一种性质导致半导体材料中的空穴的迁移率大于或等于电子的迁移率。
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公开(公告)号：US09735384B2
公开(公告)日：2017-08-15
申请号：US15018321
申请日：2016-02-08
IPC分类号： H01L31/0336 , H01L51/42 , B82Y20/00 , B82Y30/00 , H01L31/032 , H01L31/0352 , H01L31/0384 , H01L31/07 , H01L51/44 , H01L51/00
CPC分类号： H01L51/4213 , B82Y20/00 , B82Y30/00 , H01L31/0322 , H01L31/0324 , H01L31/0352 , H01L31/0384 , H01L31/07 , H01L51/0046 , H01L51/0084 , H01L51/441 , Y02E10/541 , Y02P70/521
摘要： A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.
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公开(公告)号：US20180076405A1
公开(公告)日：2018-03-15
申请号：US15675337
申请日：2017-08-11
IPC分类号： H01L51/42 , H01L31/0384 , B82Y20/00 , B82Y30/00 , H01L31/032 , H01L51/44 , H01L31/07 , H01L31/0352 , H01L51/00
CPC分类号： H01L51/4213 , B82Y20/00 , B82Y30/00 , H01L31/0322 , H01L31/0324 , H01L31/0352 , H01L31/0384 , H01L31/07 , H01L51/0046 , H01L51/0084 , H01L51/441 , Y02E10/541 , Y02P70/521
摘要： A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.
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公开(公告)号：US20160172611A1
公开(公告)日：2016-06-16
申请号：US15018321
申请日：2016-02-08
CPC分类号： H01L51/4213 , B82Y20/00 , B82Y30/00 , H01L31/0322 , H01L31/0324 , H01L31/0352 , H01L31/0384 , H01L31/07 , H01L51/0046 , H01L51/0084 , H01L51/441 , Y02E10/541 , Y02P70/521
摘要： A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.
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公开(公告)号：US20150144879A1
公开(公告)日：2015-05-28
申请号：US14456214
申请日：2014-08-11
IPC分类号： H01L31/0352
CPC分类号： H01L51/4213 , B82Y20/00 , B82Y30/00 , H01L31/0322 , H01L31/0324 , H01L31/0352 , H01L31/0384 , H01L31/07 , H01L51/0046 , H01L51/0084 , H01L51/441 , Y02E10/541 , Y02P70/521
摘要： A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.
摘要翻译： 描述复合材料。 复合材料包括半导体纳米晶体和钝化半导体纳米晶体表面的有机分子。 有机分子的一个或多个性质有助于半导体纳米晶体之间的电荷转移。 描述了包括包括半导体纳米晶体的p型半导体材料的半导体材料。 半导体材料的至少一种性质导致半导体材料中的电子的迁移率大于或等于空穴的迁移率。 描述了包括包括半导体纳米晶体的n型半导体材料的半导体材料。 半导体材料的至少一种性质导致半导体材料中的空穴的迁移率大于或等于电子的迁移率。
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公开(公告)号：US20190173031A1
公开(公告)日：2019-06-06
申请号：US16153858
申请日：2018-10-08
IPC分类号： H01L51/42 , H01L51/44 , H01L31/07 , B82Y30/00 , H01L31/032 , B82Y20/00 , H01L31/0384 , H01L31/0352
摘要： A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.
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