公开(公告)号：US10074533B1

公开(公告)日：2018-09-11

申请号：US15723390

申请日：2017-10-03

Applicant: Industrial Technology Research Institute

Inventor： Po-Chun Yeh ,  Kan-Hsueh Tsai ,  Chuan-Wei Tsou ,  Heng-Yuan Lee ,  Hsueh-Hsing Liu ,  Han-Chieh Ho ,  Yi-Keng Fu

IPC: H01L21/02 ,  H01L29/06 ,  H01L29/267 ,  H01L29/16 ,  H01L29/20

CPC classification number: H01L21/02035 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/0254 ,  H01L29/0657 ,  H01L29/16 ,  H01L29/2003 ,  H01L29/267

Abstract: This disclosure provides an epitaxial wafer, which includes: a silicon wafer having a central area and an extremity area enclosing the central area, the extremity area having a stepped profile; and an nitride epitaxial layer formed on the silicon wafer; wherein, the stepped profile has a width between 10 and 1500 μm and a height between 1 and 500 μm.

公开(公告)号：US10014375B1

公开(公告)日：2018-07-03

申请号：US15722967

申请日：2017-10-02

Applicant: Industrial Technology Research Institute

Inventor： Chuan-Wei Tsou ,  Po-Chun Yeh ,  Heng-Yuan Lee

IPC: H01L29/20 ,  H01L29/10 ,  H01L29/778

CPC classification number: H01L29/1095 ,  H01L29/2003 ,  H01L29/36 ,  H01L29/66462 ,  H01L29/7786

Abstract: A III-nitride based semiconductor structure includes a substrate; a buffer layer disposed above the substrate; a first gallium nitrite (GaN) layer disposed above the buffer layer and including p-type GaN; a second GaN layer disposed on the first GaN layer and including at least a first region and a second region; a channel layer disposed above the second GaN layer; a barrier layer disposed above the channel layer; and a gate electrode disposed above the barrier layer. The first region of the second GaN layer is positioned correspondingly to the gate electrode and includes n-type GaN having a first doping concentration. The second region of the second GaN layer (such as the lateral portion of the second GaN layer) is positioned correspondingly to the areas outsides the gate electrode and includes n-type GaN having a second doping concentration larger than the first doping concentration.