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    Heating plate crystallization method
    1.
    发明申请
    Heating plate crystallization method 失效
    加热板结晶法

    公开(公告)号：US20040253797A1

    公开(公告)日：2004-12-16

    申请号：US10648290

    申请日：2003-08-27

    Applicant: Industrial Technology Research Institute

    Inventor： Shun-Fa Huang ,  Chi-Lin Chen ,  Chiung-Wei Lin

    IPC: H01L021/20 ,  H01L021/36 ,  H01L029/76

    CPC classification number: H01L21/02667 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2022 ,  H01L29/6675 ,  H01L29/78609

    Abstract: The present invention relates to a heating plate crystallization method used in the crystallization process for the poly-silicon thin-film transistor, and more particularly, the present invention relates to a heating plate crystallization method by using a pulsed rapid thermal annealing process (PRTP) By means of the characteristic provided by the present invention, namely, the heating plate area has a better absorption rate to the infrared rays and has a high thermal stability. The heating plate area is used for absorbing the infrared rays, and after the heating, the energy is indirectly transferred to the amorphous layer via a thermal conduction method so that the amorphous layer will be rapidly crystallized to form the poly-silicon. Furthermore, the present invention uses the pulsed rapid thermal annealing process (PRTP) using the infrared rays to instantly heat, to selectively heat the materials by taking the advantage that different materials have different absorption rates to the infrared rays. However, the glass substrate and the amorphous cannot effectively absorb the infrared rays so that the glass substrate will not be broken while the process temperature of the heating plate area is excessively high (>70null C.). Therefore, the most effective rapid thermal crystallization can be achieved.

    Abstract translation: 本发明涉及用于多晶硅薄膜晶体管的结晶工艺中的加热板结晶方法，更具体地说，本发明涉及使用脉冲快速热退火工艺（PRTP）的加热板结晶方法， 通过本发明提供的特征，即加热板区域对红外线具有更好的吸收率并具有高的热稳定性。 加热板区域用于吸收红外线，并且在加热之后，能量通过热传导方法间接转移到非晶层，使得非晶层将快速结晶以形成多晶硅。 此外，本发明使用红外线的脉冲快速热退火工艺（PRTP）立即加热，通过利用不同材料对红外线具有不同吸收率的优点来选择性地加热材料。 然而，玻璃基板和非晶体不能有效地吸收红外线，使得当加热板区域的处理温度过高（> 70℃）时玻璃基板不会断裂。 因此，可以实现最有效的快速热结晶。

    Method for forming a single-crystal silicon layer on a transparent substrate
    2.
    发明申请
    Method for forming a single-crystal silicon layer on a transparent substrate 有权
    在透明基板上形成单晶硅层的方法

    公开(公告)号：US20040180518A1

    公开(公告)日：2004-09-16

    申请号：US10628893

    申请日：2003-07-28

    Applicant: Industrial Technology Research Institute

    Inventor： Chich Shang Chang ,  Chi-Shen Lee ,  Shun-Fa Huang ,  Jung Fang Chang ,  Wen-Chih Hu ,  Liang-Tang Wang ,  Chai-Yuan Sheu

    IPC: H01L021/84

    CPC classification number: B32B37/00 ,  B32B2310/0825 ,  B32B2311/02 ,  B32B2315/08 ,  C03C27/046 ,  H01L2224/83192 ,  Y10S438/977

    Abstract: A method for forming a, single-crystal silicon layer on a transparent substrate. A transparent substrate having an amorphous silicon layer formed thereon and a silicon wafer having a hydrogen ion layer formed therein are provided. The silicon wafer is then reversed and laminated onto the amorphous silicon layer so that a layer of single-crystal silicon is between the hydrogen ion layer and the amorphous silicon layer. The laminated silicon wafer and the amorphous silicon layer are then subjected to laser or infrared light to cause chemical bonding of the single crystal silicon layer and the amorphous silicon layer and inducing a hydro-cracking reaction thereby separating the silicon wafer is and the transparent substrate at the hydrogen ion layer, and leaving the single-crystal silicon layer on the transparent substrate.

    Abstract translation: 在透明基板上形成单晶硅层的方法。 提供其上形成有非晶硅层的透明基板和其中形成有氢离子层的硅晶片。 然后将硅晶片反转并层压到非晶硅层上，使得单晶硅层位于氢离子层和非晶硅层之间。 然后对层压硅晶片和非晶硅层进行激光或红外光以使单晶硅层和非晶硅层发生化学键合，并引起加氢裂化反应，从而将硅晶片和透明基板分离 氢离子层，并在透明基板上留下单晶硅层。

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