SEMICONDUCTOR DEVICE
    1.
    发明申请

    公开(公告)号:US20250031427A1

    公开(公告)日:2025-01-23

    申请号:US18402748

    申请日:2024-01-03

    Abstract: A semiconductor device includes a substrate, a dummy gate structure, and a gate structure. The substrate has a dummy gate trench and a gate trench, and includes a first well region, a second well region and a source region. The first well region is formed by doping at least one element from a first element group, and has a first conductive channel. The second well region is formed by doping at least one element from a second element group, the second well region is on the first well region and has a second conductive channel, a polarity of the second conductive channel is opposite to that of the first conductive channel. The dummy gate structure is in the dummy gate trench of the substrate, and a portion of the dummy gate structure is in the first well region. The gate structure is between the adjacent dummy gate structures.

    BIOBASED WATER REPELLENT AUXILIARY AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20240218589A1

    公开(公告)日:2024-07-04

    申请号:US18090509

    申请日:2022-12-29

    CPC classification number: D06M15/564 D10B2401/022

    Abstract: A biobased water repellent auxiliary agent and a method of manufacturing the same are provided. The biobased water repellent auxiliary agent includes a molecular complex composed of a polyurethane (PU) dendrimer and a water-based polyurethane dispersion (PUD). The PU dendrimer is formed by polymerizing a trifunctional-group-containing biobased material and an aliphatic linear isocyanate. The water-based PUD includes a monomer derived from the trifunctional-group-containing biobased material, a monomer derived from a cyclic isocyanate, and a monomer derived from a hydrophilic compound. The molecular complex is formed by copolymerizing the PU dendrimer, the trifunctional-group-containing biobased material, the cyclic isocyanate, and the hydrophilic compound.

    Copolymer, and method for preparing a monomer used to form the copolymer
    4.
    发明授权
    Copolymer, and method for preparing a monomer used to form the copolymer 有权
    共聚物和制备用于形成共聚物的单体的方法

    公开(公告)号:US09422398B2

    公开(公告)日:2016-08-23

    申请号:US14724048

    申请日:2015-05-28

    CPC classification number: C08G69/44 C07C231/02 C08G69/265 C08G69/28 C07C233/83

    Abstract: A copolymer, and a method for preparing a monomer used to form the copolymer are provided. The copolymer is a reaction product of a first monomer and a second monomer. In particular, the first monomer has a structure represented by Formula (I), and the second monomer has a structure represented by Formula (II), Formula (III), or Formula (IV) wherein Y is —NH2, or —CO2H; m is a positive integer from 2 to 10; X is independently —NH2, or —OH; A is CH2n, n is a positive integer from 2 to 10; and, l is a positive integer from 1 to 5.

    Abstract translation: 提供共聚物和制备用于形成共聚物的单体的方法。 共聚物是第一单体和第二单体的反应产物。 特别地,第一单体具有由式(I)表示的结构,第二单体具有由式(II),式(III)或式(IV)表示的结构,其中Y是-NH 2或-CO 2 H; m是2至10的正整数; X独立地是-NH 2或-OH; A为CH 2,n为2〜10的正整数。 l为1〜5的正整数。

    SUPERABSORBENT POLYMERS
    5.
    发明申请
    SUPERABSORBENT POLYMERS 有权
    超级聚合物

    公开(公告)号:US20130171737A1

    公开(公告)日:2013-07-04

    申请号:US13720087

    申请日:2012-12-19

    Abstract: A superabsorbent polymer network formed of two monomers and two crosslinkers. The monomers and the crosslinkers are described herein. Further, a method for preparing this superabsorbent polymer network is disclosed. Also disclosed is a method of determining a ratio between two monomeric moieties in a superabsorbent polymer network formed of two monomers.

    Abstract translation: 由两种单体和两种交联剂形成的超吸收聚合物网络。 本文描述了单体和交联剂。 此外,公开了制备该超吸收性聚合物网络的方法。 还公开了确定由两种单体形成的超吸收聚合物网络中的两个单体部分之间的比率的方法。

    SEMICONDUCTOR DEVICE
    7.
    发明公开

    公开(公告)号:US20240154008A1

    公开(公告)日:2024-05-09

    申请号:US18151487

    申请日:2023-01-09

    CPC classification number: H01L29/408 H01L29/1608 H01L29/66068 H01L29/7813

    Abstract: Provided is a semiconductor device including a substrate, a channel layer, a gate structure, a first doped region, a second doped region, a third doped region and a channel cap layer. The channel layer is located on the substrate. The channel layer has a trench. The gate structure is disposed in the trench. The first doped region and the second doped region are located in the channel layer on two sides of the gate structure. The third doped region is located in the substrate below the channel layer. The channel cap layer is located between the gate structure and the first doped region, between the gate structure and the second doped region, and between the gate structure and the channel layer. An energy band gap of the channel cap layer is larger than an energy band gap of the channel layer.

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