公开(公告)号：US20170227613A1

公开(公告)日：2017-08-10

申请号：US15375995

申请日：2016-12-12

Applicant: Infineon Technologies AG

Inventor： Anton BACHLEITNER HOFMANN ,  Hubert BRUECKL ,  Klemens PRUEGL ,  Wolfgang RABERG ,  Armin SATZ ,  Dieter SUESS ,  Tobias WURFT

IPC: G01R33/00 ,  H01L43/08 ,  G01R33/09 ,  H01L43/02

CPC classification number: G01R33/0017 ,  G01R33/091 ,  H01L43/02 ,  H01L43/08

Abstract: An embodiment relates to a magnetic sensor device (500) comprising a magneto-resistive structure (501). The magneto-resistive structure (501) comprises a magnetic free layer (502) configured to spontaneously generate a closed flux magnetization pattern in the free layer (502). The magneto-resistive structure (500) also comprises a magnetic reference layer (506) having a non-closed flux reference magnetization pattern. The magnetic sensor device (500) further comprises a current generator (580) configured to generate an electric current in one or more layers of the magneto-resistive structure (501). The electric current has a non-zero directional component perpendicular to the reference magnetization pattern.