公开(公告)号：US20200011943A1

公开(公告)日：2020-01-09

申请号：US16028738

申请日：2018-07-06

Applicant: Infineon Technologies AG

Inventor： Juergen ZIMMER ,  Klemens PRUEGL

IPC: G01R33/09 ,  H01L43/10

Abstract: A magnetoresistive sensor includes a first non-magnetic layer, a second non-magnetic layer, and a magnetic free bi-layer. The magnetic free bi-layer is disposed between first non-magnetic layer and the second non-magnetic layer, the magnetic free bi-layer including a first magnetic free layer coupled to a second magnetic free layer. The first magnetic free layer is coupled to the first non-magnetic layer, and the second magnetic free layer is coupled to the second non-magnetic layer. The second non-magnetic layer comprises a non-magnetic material having an atomic radius within 10% of an atomic radius of at least one of the first magnetic free layer and the second magnetic free layer.

公开(公告)号：US20170227613A1

公开(公告)日：2017-08-10

申请号：US15375995

申请日：2016-12-12

Applicant: Infineon Technologies AG

Inventor： Anton BACHLEITNER HOFMANN ,  Hubert BRUECKL ,  Klemens PRUEGL ,  Wolfgang RABERG ,  Armin SATZ ,  Dieter SUESS ,  Tobias WURFT

IPC: G01R33/00 ,  H01L43/08 ,  G01R33/09 ,  H01L43/02

CPC classification number: G01R33/0017 ,  G01R33/091 ,  H01L43/02 ,  H01L43/08

Abstract: An embodiment relates to a magnetic sensor device (500) comprising a magneto-resistive structure (501). The magneto-resistive structure (501) comprises a magnetic free layer (502) configured to spontaneously generate a closed flux magnetization pattern in the free layer (502). The magneto-resistive structure (500) also comprises a magnetic reference layer (506) having a non-closed flux reference magnetization pattern. The magnetic sensor device (500) further comprises a current generator (580) configured to generate an electric current in one or more layers of the magneto-resistive structure (501). The electric current has a non-zero directional component perpendicular to the reference magnetization pattern.

公开(公告)号：US20160307753A1

公开(公告)日：2016-10-20

申请号：US15189060

申请日：2016-06-22

Applicant: Infineon Technologies AG

Inventor： Guenther RUHL ,  Klemens PRUEGL

IPC: H01L21/02 ,  H01L29/16 ,  H01L21/225 ,  H01L29/04 ,  H01L21/04 ,  H01L29/06 ,  H01L29/167

CPC classification number: H01L21/02524 ,  H01L21/02422 ,  H01L21/0243 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02527 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/0405 ,  H01L21/2254 ,  H01L21/7685 ,  H01L29/04 ,  H01L29/0669 ,  H01L29/1075 ,  H01L29/16 ,  H01L29/1606 ,  H01L29/1608 ,  H01L29/167 ,  H01L29/66037 ,  H01L29/778

Abstract: In various embodiments, a method for processing a carrier is provided. The method for processing a carrier may include: forming a first catalytic metal layer over a carrier; forming a source layer over the first catalytic metal layer; forming a second catalytic metal layer over the source layer, wherein the thickness of the second catalytic metal layer is larger than the thickness of the first catalytic metal layer; and subsequently performing an anneal to enable diffusion of the material of the source layer forming an interface layer adjacent to the surface of the carrier from the diffused material of the source layer.

Abstract translation: 在各种实施例中，提供了一种处理载体的方法。 用于处理载体的方法可以包括：在载体上形成第一催化金属层; 在所述第一催化金属层上形成源层; 在所述源层上形成第二催化金属层，其中所述第二催化金属层的厚度大于所述第一催化金属层的厚度; 并且随后进行退火以使源层的材料与源层的扩散材料形成与载体表面相邻的界面层的扩散。

公开(公告)号：US20140284663A1

公开(公告)日：2014-09-25

申请号：US14186390

申请日：2014-02-21

Applicant: Infineon Technologies AG

Inventor： Dirk MEINHOLD ,  Emanuele Bruno BODINI ,  Felix BRAUN ,  Hermann GRUBER ,  Uwe HOECKELE ,  Dirk OFFENBERG ,  Klemens PRUEGL ,  Ines UHLIG

IPC: H01L27/146 ,  H01L27/148

CPC classification number: H01L27/14689 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14687 ,  H01L27/14806

Abstract: Embodiments related to a method of manufacturing of an imager and an imager device are shown and depicted.

Abstract translation: 示出并描绘了与成像器和成像器件的制造方法有关的实施例。

公开(公告)号：US20240094314A1

公开(公告)日：2024-03-21

申请号：US17932508

申请日：2022-09-15

Applicant: Infineon Technologies AG

Inventor： Bernhard ENDRES ,  Klemens PRUEGL ,  Juergen ZIMMER ,  Michael KIRSCH ,  Milan AGRAWAL

IPC: G01R33/09

CPC classification number: G01R33/098

Abstract: A tunnel magnetoresistive (TMR) sensing element may include a free layer. The free layer of the TMR sensing element may include a first cobalt iron boron (CoFeB) layer, an interlayer over the first CoFeB layer, a second CoFeB layer over the interlayer, and a nickel iron (NiFe) layer over the second CoFeB layer.

公开(公告)号：US20210373094A1

公开(公告)日：2021-12-02

申请号：US17324446

申请日：2021-05-19

Applicant: Infineon Technologies AG

Inventor： Bernhard ENDRES ,  Klemens PRUEGL

IPC: G01R33/09 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L43/02

Abstract: Exemplary embodiments are directed to magnetoresistive sensors and corresponding fabrication methods for magnetoresistive sensors. One example of a magnetoresistive sensor includes a layer stack, wherein the layer stack includes a reference layer having a fixed reference magnetization, wherein the fixed reference magnetization has a first magnetic orientation. The layer stack furthermore includes a magnetically free system of a plurality of layers, wherein the magnetically free system has a magnetically free magnetization, wherein the magnetically free magnetization is variable in the presence of an external magnetic field, and wherein the magnetically free magnetization has a second magnetic orientation in a ground state. The magnetically free system has two ferromagnetic layers and an interlayer, wherein the interlayer is arranged between the two ferromagnetic layers and includes magnesium oxide. The layer stack furthermore includes a barrier layer, which is arranged between the reference layer and the magnetically free system and includes magnesium oxide.