公开(公告)号：US20240055256A1

公开(公告)日：2024-02-15

申请号：US18231176

申请日：2023-08-07

Applicant: Infineon Technologies AG

Inventor： Ravi Keshav JOSHI ,  Kristijan Luka MLETSCHNIG ,  Axel KÖNIG ,  Gregor LANGER

IPC: H01L21/04 ,  H01L29/16 ,  H01L29/04 ,  H01L29/45

CPC classification number: H01L21/0485 ,  H01L29/1608 ,  H01L29/04 ,  H01L29/45

Abstract: The disclosure relates to a method for manufacturing a contact on a silicon carbide semiconductor substrate and to a silicon carbide semiconductor device comprising a crystalline silicon carbide semiconductor substrate and a contact layer directly in contact with the silicon carbide semiconductor substrate surface and having, at an interface to the semiconductor substrate, a contact phase portion comprising at least a metal, silicon, and carbon. The method comprises the acts of providing a crystalline silicon carbide semiconductor substrate, depositing a metallic contact material layer onto the crystalline silicon carbide semiconductor substrate, and irradiating at least a part of the silicon carbide semiconductor substrate and at least a part of the metallic contact material layer at their interface with at least one thermal annealing laser beam, thereby generating a contact phase portion at the interface, wherein the contact phase portion comprises at least a metal, silicon, and carbon.

公开(公告)号：US20230215729A1

公开(公告)日：2023-07-06

申请号：US18090673

申请日：2022-12-29

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim SCHULZE ,  Florian Markus GRASSE ,  Moriz JELINEK ,  Axel KÖNIG ,  Gregor LANGER ,  Bemhard LEITL ,  Kristijan Luka MLETSCHNIG ,  Werner SCHUSTEREDER

IPC: H01L21/04 ,  H01L29/45 ,  H01L29/06 ,  H01L21/265

CPC classification number: H01L21/0485 ,  H01L29/45 ,  H01L29/06 ,  H01L21/26513 ,  H01L29/04

Abstract: A method of manufacturing a metal silicide layer comprises performing laser thermal annealing of a surface region of a silicon carbide (SiC) substrate, exposing a surface of a thus obtained silicon layer, depositing a metal layer above the exposed silicon layer, and/or thermally treating a stack of layers, comprising the silicon layer and the metal layer, to form a metal silicide layer. Alternatively and/or additionally, the method may comprise depositing a silicon layer above a SiC substrate, depositing a metal layer, and/or performing laser thermal annealing of the SiC substrate and a stack of layers above the SiC substrate to form a metal silicide layer, wherein the stack of layers comprises the silicon layer and the metal layer. Moreover, a semiconductor device is described, comprising a SiC substrate, a metal silicide layer, and a polycrystalline layer in direct contact with the SiC substrate and the metal silicide layer.