公开(公告)号：US20180088042A1

公开(公告)日：2018-03-29

申请号：US15716598

申请日：2017-09-27

申请人： Infineon Technologies AG

发明人： Naveen Goud GANAGONA ,  Moriz JELINEK ,  Helmut OEFNER ,  Hans-Joachim SCHULZE ,  Werner SCHUSTEREDER

IPC分类号： G01N21/3563

CPC分类号： G01N21/3563 ,  G01N2021/3568 ,  G01N2021/3572 ,  G01N2021/3595

摘要： A method of determining the carbon content in a silicon sample may include: generating electrically active polyatomic complexes within the silicon sample. Each polyatomic complex may include at least one carbon atom. The method may further include: determining a quantity indicative of the content of the generated polyatomic complexes in the silicon sample, and determining the carbon content in the silicon sample from the determined quantity.

公开(公告)号：US20210193435A1

公开(公告)日：2021-06-24

申请号：US17127309

申请日：2020-12-18

申请人： Infineon Technologies AG

发明人： Moriz JELINEK ,  Michael HELL ,  Caspar LEENDERTZ ,  Kristijan Luka MLETSCHNIG ,  Hans-Joachim SCHULZE

IPC分类号： H01J37/317 ,  H01L21/265

摘要： In an example, a substrate is oriented to a target axis, wherein a residual angular misalignment between the target axis and a preselected crystal channel direction in the substrate is within an angular tolerance interval. Dopant ions are implanted into the substrate using an ion beam that propagates along an ion beam axis. The dopant ions are implanted at implant angles between the ion beam axis and the target axis. The implant angles are within an implant angle range. A channel acceptance width is effective for the preselected crystal channel direction. The implant angle range is greater than 80% of a sum of the channel acceptance width and twofold the angular tolerance interval. The implant angle range is smaller than 500% of the sum of the channel acceptance width and twofold the angular tolerance interval.

公开(公告)号：US20230083106A1

公开(公告)日：2023-03-16

申请号：US17476829

申请日：2021-09-16

申请人： Infineon Technologies AG

发明人： Moriz JELINEK ,  Paul ELLINGHAUS ,  Axel KOENIG ,  Caspar LEENDERTZ ,  Hans-Joachim SCHULZE ,  Werner SCHUSTEREDER

IPC分类号： H01L21/04 ,  H01L29/16 ,  H01L29/04

摘要： A method includes orienting a silicon carbide layer to a first crystal channel direction relative to a first ion beam and implanting phosphorous into the silicon carbide layer using the first ion beam to define a first doped region in the silicon carbide layer. A deviation angle between the first crystal channel direction and the first ion beam is less than ±1° and the first crystal channel direction comprises a direction or a direction.

公开(公告)号：US20200381253A1

公开(公告)日：2020-12-03

申请号：US16886175

申请日：2020-05-28

申请人： Infineon Technologies AG

发明人： Hans-Joachim SCHULZE ,  Romain ESTEVE ,  Moriz JELINEK ,  Caspar LEENDERTZ ,  Werner SCHUSTEREDER

IPC分类号： H01L21/04 ,  H01L29/06 ,  H01L29/16

摘要： A silicon carbide substrate is provided that includes a drift layer of a first conductivity type and a trench extending from a main surface of the silicon carbide substrate into the drift layer. First dopants are implanted through a first trench sidewall of the trench. The first dopants have a second conductivity type and are implanted at a first implant angle into the silicon carbide substrate, wherein at the first implant angle channeling occurs in the silicon carbide substrate. The first dopants form a first compensation layer extending parallel to the first trench sidewall.

公开(公告)号：US20240145247A1

公开(公告)日：2024-05-02

申请号：US18407587

申请日：2024-01-09

申请人： Infineon Technologies AG

发明人： Moriz JELINEK ,  Michael HELL ,  Caspar LEENDERTZ ,  Kristijan Luka MLETSCHNIG ,  Hans-Joachim SCHULZE

IPC分类号： H01L21/265 ,  H01J37/317 ,  H01L21/04 ,  H01L29/36

CPC分类号： H01L21/26586 ,  H01J37/3171 ,  H01L21/046 ,  H01L21/047 ,  H01L21/265 ,  H01L21/2652 ,  H01L29/36 ,  H01J2237/24578 ,  H01J2237/31703

摘要： In an example, a substrate is oriented to a target axis, wherein a residual angular misalignment between the target axis and a preselected crystal channel direction in the substrate is within an angular tolerance interval. Dopant ions are implanted into the substrate using an ion beam that propagates along an ion beam axis. The dopant ions are implanted at implant angles between the ion beam axis and the target axis. The implant angles are within an implant angle range. A channel acceptance width is effective for the preselected crystal channel direction. The implant angle range is greater than 80% of a sum of the channel acceptance width and twofold the angular tolerance interval. The implant angle range is smaller than 500% of the sum of the channel acceptance width and twofold the angular tolerance interval.

公开(公告)号：US20230215729A1

公开(公告)日：2023-07-06

申请号：US18090673

申请日：2022-12-29

申请人： Infineon Technologies AG

发明人： Hans-Joachim SCHULZE ,  Florian Markus GRASSE ,  Moriz JELINEK ,  Axel KÖNIG ,  Gregor LANGER ,  Bemhard LEITL ,  Kristijan Luka MLETSCHNIG ,  Werner SCHUSTEREDER

IPC分类号： H01L21/04 ,  H01L29/45 ,  H01L29/06 ,  H01L21/265

CPC分类号： H01L21/0485 ,  H01L29/45 ,  H01L29/06 ,  H01L21/26513 ,  H01L29/04

摘要： A method of manufacturing a metal silicide layer comprises performing laser thermal annealing of a surface region of a silicon carbide (SiC) substrate, exposing a surface of a thus obtained silicon layer, depositing a metal layer above the exposed silicon layer, and/or thermally treating a stack of layers, comprising the silicon layer and the metal layer, to form a metal silicide layer. Alternatively and/or additionally, the method may comprise depositing a silicon layer above a SiC substrate, depositing a metal layer, and/or performing laser thermal annealing of the SiC substrate and a stack of layers above the SiC substrate to form a metal silicide layer, wherein the stack of layers comprises the silicon layer and the metal layer. Moreover, a semiconductor device is described, comprising a SiC substrate, a metal silicide layer, and a polycrystalline layer in direct contact with the SiC substrate and the metal silicide layer.