公开(公告)号：US20250110160A1

公开(公告)日：2025-04-03

申请号：US18882094

申请日：2024-09-11

Applicant: Infineon Technologies AG

Inventor： Michael EMMERT ,  Jürgen ZIMMER ,  Bernhard ENDRES

IPC: G01R27/26

Abstract: The present disclosure relates to a sensor circuit, including a first connection, a second connection and a bridge circuit, which is connected between the first connection and the second connection, having a plurality of bridge resistors with a respective temperature coefficient. The bridge circuit has a measurement sensitivity and a temperature coefficient of measurement sensitivity and a bridge offset with a temperature coefficient of the bridge offset. The sensor circuit further includes at least one compensating resistor, which is connected between the first connection and the second connection, with a temperature coefficient that differs from the temperature coefficient of the bridge resistors.

公开(公告)号：US20250147129A1

公开(公告)日：2025-05-08

申请号：US18939078

申请日：2024-11-06

Applicant: Infineon Technologies AG

Inventor： Bernhard ENDRES ,  Andreas STRAßER

IPC: G01R33/09 ,  G01L1/12 ,  H10N50/10 ,  H10N50/85

Abstract: The present disclosure relates to a magnetoresistive sensor. The magnetoresistive sensor includes at least one sensor element having a layer stack. The layer stack includes a magnetically free layer with a magnetically free magnetization. A measurement sensitivity of the sensor element is temperature-dependent. The magnetoresistive sensor also includes a device which is configured to induce a temperature-dependent mechanical stress in the magnetically free layer. The temperature dependence of the measurement sensitivity can be at least partially compensated for by the temperature-dependent mechanical stress.

公开(公告)号：US20240418803A1

公开(公告)日：2024-12-19

申请号：US18335408

申请日：2023-06-15

Applicant: Infineon Technologies AG

Inventor： Bernhard ENDRES

IPC: G01R33/09

Abstract: A magnetic sensor system includes a magnetoresistive sensor comprising a magnetic free layer having a sensing plane and a magnetically-free magnetization arranged within the sensing plane, where the magnetically-free magnetization is variable in a presence of an in-plane magnetic field that is aligned with the sensing plane; and a ferromagnetic disc having a magnetic vortex in a ground state, wherein the magnetic vortex is configured to react to an out-of-plane magnetic field and generate a stray field in response to the out-of-plane magnetic field being applied to the ferromagnetic disc. The stray field has an in-plane magnetic field component that is proportional to the out-of-plane magnetic field. The magnetic free layer is configured to receive the in-plane magnetic field component of the stray field. The magnetically-free magnetization is configured to change based on the in-plane magnetic field component of the stray field.

公开(公告)号：US20240310461A1

公开(公告)日：2024-09-19

申请号：US18591878

申请日：2024-02-29

Applicant: Infineon Technologies AG

Inventor： Bernhard ENDRES ,  Andreas STRAßER ,  Juergen ZIMMER

IPC: G01R33/09 ,  H10N50/10

CPC classification number: G01R33/093 ,  G01R33/098 ,  H10N50/10

Abstract: A magnetoresistive sensor includes at least one magnetoresistive element having a layer stack. The layer stack has at least one free layer that has a magnetization that is changeable in the layer plane and that varies depending on the field strength of an external magnetic field acting parallel to the layer plane. The magnetoresistive sensor furthermore has a shielding element that has a vortex magnetization with a closed flux in the layer plane, wherein the shielding element is configured, in the presence of the external magnetic field, to generate a linear magnetic stray field that is directed counter to the external magnetic field.

公开(公告)号：US20240329166A1

公开(公告)日：2024-10-03

申请号：US18194749

申请日：2023-04-03

Applicant: Infineon Technologies AG

Inventor： Bernhard ENDRES ,  Jürgen FÖRSTER ,  Andreas STRAßER

IPC: G01R33/09 ,  H10N50/10

CPC classification number: G01R33/093 ,  G01R33/091 ,  H10N50/10

Abstract: A magnetoresistive sensor includes a sensing element and a stress inducing layer. The sensing element has a layer stack that includes a reference layer having a fixed reference magnetization aligned with a magnetization axis; a magnetic free layer having a magnetically free magnetization, wherein the magnetically free magnetization is variable in a presence of an external magnetic field; and a non-magnetic layer arranged between the reference layer and the magnetic free layer. The stress inducing layer is coupled to the layer stack and is configured to apply a force to the layer stack to induce a mechanical stress in the layer stack along a mechanical stress axis such that the magnetization axis is aligned parallel with the mechanical stress axis or perpendicular with the mechanical stress axis.

公开(公告)号：US20240094314A1

公开(公告)日：2024-03-21

申请号：US17932508

申请日：2022-09-15

Applicant: Infineon Technologies AG

Inventor： Bernhard ENDRES ,  Klemens PRUEGL ,  Juergen ZIMMER ,  Michael KIRSCH ,  Milan AGRAWAL

IPC: G01R33/09

CPC classification number: G01R33/098

Abstract: A tunnel magnetoresistive (TMR) sensing element may include a free layer. The free layer of the TMR sensing element may include a first cobalt iron boron (CoFeB) layer, an interlayer over the first CoFeB layer, a second CoFeB layer over the interlayer, and a nickel iron (NiFe) layer over the second CoFeB layer.

公开(公告)号：US20210373094A1

公开(公告)日：2021-12-02

申请号：US17324446

申请日：2021-05-19

Applicant: Infineon Technologies AG

Inventor： Bernhard ENDRES ,  Klemens PRUEGL

IPC: G01R33/09 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L43/02

Abstract: Exemplary embodiments are directed to magnetoresistive sensors and corresponding fabrication methods for magnetoresistive sensors. One example of a magnetoresistive sensor includes a layer stack, wherein the layer stack includes a reference layer having a fixed reference magnetization, wherein the fixed reference magnetization has a first magnetic orientation. The layer stack furthermore includes a magnetically free system of a plurality of layers, wherein the magnetically free system has a magnetically free magnetization, wherein the magnetically free magnetization is variable in the presence of an external magnetic field, and wherein the magnetically free magnetization has a second magnetic orientation in a ground state. The magnetically free system has two ferromagnetic layers and an interlayer, wherein the interlayer is arranged between the two ferromagnetic layers and includes magnesium oxide. The layer stack furthermore includes a barrier layer, which is arranged between the reference layer and the magnetically free system and includes magnesium oxide.

公开(公告)号：US20240302459A1

公开(公告)日：2024-09-12

申请号：US18180600

申请日：2023-03-08

Applicant: Infineon Technologies AG

Inventor： Bernhard ENDRES

IPC: G01R33/09 ,  H01F1/00 ,  H01F10/32

CPC classification number: G01R33/098 ,  H01F1/0009 ,  H01F10/3254 ,  H01F10/3272

Abstract: A tunnel magnetoresistance (TMR) sensing element includes a layer stack having a tantalum-nitride (TaN) layer; a reference layer system; a magnetic free layer having a magnetically free magnetization; and a tunnel barrier layer arranged between the reference layer system and the magnetic free layer. The reference layer system includes a pinned layer having a fixed pinned magnetization; a reference layer having a having a fixed reference magnetization; a coupling interlayer arranged between the pinned layer and the reference layer; and a natural antiferromagnetic (NAF) layer comprising iridium-manganese (IrMn), wherein the NAF layer is formed in direct contact with the TaN layer, wherein the NAF layer is configured to hold the fixed pinned magnetization in a first magnetic orientation and hold the fixed reference magnetization in a second magnetic orientation, and wherein the direct contact of the NAF layer with the TaN layer increases a blocking temperature of the NAF layer.

公开(公告)号：US20240103102A1

公开(公告)日：2024-03-28

申请号：US17935743

申请日：2022-09-27

Applicant: Infineon Technologies AG

Inventor： Bernhard ENDRES

IPC: G01R33/09 ,  G01R33/00

CPC classification number: G01R33/098 ,  G01R33/0035

Abstract: In some implementations, a magnetic sensor may apply an electrical signal across a tunnel barrier layer of a tunnel magnetoresistive (TMR) sensing element. The electrical signal may have a first signal level during a first time period and a second signal level during a second time period. The second signal level may be different from the first signal level. The magnetic sensor may generate an offset-corrected sensor signal based on a sensor signal that results from applying the electrical signal across the tunnel barrier layer of the TMR sensing element.

公开(公告)号：US20230314534A1

公开(公告)日：2023-10-05

申请号：US18193091

申请日：2023-03-30

Applicant: Infineon Technologies AG

Inventor： Klemens PRÜGL ,  Miriam SCHWAN ,  Bernhard ENDRES

IPC: G01R33/09 ,  G11C11/16 ,  H01F10/32

CPC classification number: G01R33/093 ,  G11C11/161 ,  H10N50/85 ,  H10N50/10 ,  H10N50/01 ,  H01F10/3268

Abstract: A device having a spin valve layer sequence, wherein the spin valve layer sequence includes a first magnetic layer having a variable direction of magnetization, a second magnetic layer having a fixed direction of magnetization, and a stabilization layer for stabilizing the fixed direction of magnetization of the second magnetic layer, wherein the stabilization layer includes a precious metal-free antiferromagnet.