公开(公告)号：US20240194444A1

公开(公告)日：2024-06-13

申请号：US18524043

申请日：2023-11-30

申请人： Infineon Technologies AG

发明人： Moriz Jelinek ,  Axel König ,  Bernhard Leitl

IPC分类号： H01J37/317 ,  H01J37/304

CPC分类号： H01J37/3171 ,  H01J37/304 ,  H01J2237/24405 ,  H01J2237/24528 ,  H01J2237/24535 ,  H01J2237/31703

摘要： An ion beam current measurement device includes a first Faraday cup having a first ion beam entrance slit of a first width W1. The first Faraday cup is configured to generate a first current signal. The device further includes a second Faraday cup having a second ion beam entrance slit of a second width W2. The second Faraday cup is configured to generate a second current signal. The slit widths are designed such that W2 is greater than W1.

公开(公告)号：US20190333765A1

公开(公告)日：2019-10-31

申请号：US16395772

申请日：2019-04-26

申请人： Infineon Technologies AG

发明人： Markus Kahn ,  Oliver Humbel ,  Ravi Keshav Joshi ,  Philipp Sebastian Koch ,  Angelika Koprowski ,  Bernhard Leitl ,  Christian Maier ,  Gerhard Schmidt ,  Juergen Steinbrenner

IPC分类号： H01L21/02 ,  H01L29/66

摘要： A method for manufacturing a high-voltage semiconductor device includes exposing a semiconductor substrate to a plasma to form a protective substance layer on the semiconductor substrate. A semiconductor device includes a semiconductor substrate and a protective substance layer on the semiconductor substrate.