公开(公告)号：US20230005794A1

公开(公告)日：2023-01-05

申请号：US17781585

申请日：2020-12-09

Applicant: Infineon Technologies AG

Inventor： Christian Beyer ,  Francisco Javier Santos Rodriguez ,  Hans-Joachim Schulze ,  Marko David Swoboda

IPC: H01L21/82 ,  H01L21/02 ,  H01L21/04 ,  H01L21/223 ,  H01L21/265 ,  H01L21/268 ,  H01L21/3105 ,  H01L21/683 ,  H01L29/16

Abstract: A method of splitting off a semiconductor wafer from a semiconductor bottle includes: forming a separation region within the semiconductor boule, the separation region having at least one altered physical property which increases thermo-mechanical stress within the separation region relative to the remainder of the semiconductor boule; and applying an external force to the semiconductor boule such that at least one crack propagates along the separation region and a wafer splits from the semiconductor boule.

公开(公告)号：US11081393B2

公开(公告)日：2021-08-03

申请号：US16707579

申请日：2019-12-09

Applicant: Infineon Technologies AG

Inventor： Christian Beyer ,  Francisco Javier Santos Rodriguez ,  Hans-Joachim Schulze ,  Marko Swoboda

IPC: H01L21/82 ,  H01L21/683 ,  H01L21/223 ,  H01L21/268 ,  H01L21/02 ,  H01L21/3105 ,  H01L29/16 ,  H01L21/04 ,  H01L21/265

Abstract: A method of splitting a semiconductor wafer includes: forming one or more epitaxial layers on the semiconductor wafer; forming a plurality of device structures in the one or more epitaxial layers; forming a metallization layer and/or a passivation layer over the plurality of device structures; attaching a carrier to the semiconductor wafer with the one or more epitaxial layers, the carrier protecting the plurality of device structures and mechanically stabilizing the semiconductor wafer; forming a separation region within the semiconductor wafer, the separation region having at least one altered physical property which increases thermo-mechanical stress within the separation region relative to the remainder of the semiconductor wafer; and applying an external force to the semiconductor wafer such that at least one crack propagates along the separation region and the semiconductor wafer splits into two separate pieces, one of the pieces retaining the plurality of device structures.

公开(公告)号：US20210175123A1

公开(公告)日：2021-06-10

申请号：US16707579

申请日：2019-12-09

Applicant: Infineon Technologies AG

Inventor： Christian Beyer ,  Francisco Javier Santos Rodriguez ,  Hans-Joachim Schulze ,  Marko Swoboda

IPC: H01L21/82 ,  H01L21/683 ,  H01L21/223 ,  H01L21/268 ,  H01L21/265 ,  H01L21/02 ,  H01L21/3105 ,  H01L29/16 ,  H01L21/04

Abstract: A method of splitting a semiconductor wafer includes: forming one or more epitaxial layers on the semiconductor wafer; forming a plurality of device structures in the one or more epitaxial layers; forming a metallization layer and/or a passivation layer over the plurality of device structures; attaching a carrier to the semiconductor wafer with the one or more epitaxial layers, the carrier protecting the plurality of device structures and mechanically stabilizing the semiconductor wafer; forming a separation region within the semiconductor wafer, the separation region having at least one altered physical property which increases thermo-mechanical stress within the separation region relative to the remainder of the semiconductor wafer; and applying an external force to the semiconductor wafer such that at least one crack propagates along the separation region and the semiconductor wafer splits into two separate pieces, one of the pieces retaining the plurality of device structures.