公开(公告)号：US12107017B2

公开(公告)日：2024-10-01

申请号：US18076763

申请日：2022-12-07

Applicant: Infineon Technologies AG

Inventor： Ralf Rieske ,  Marko Swoboda ,  Albrecht Ullrich

IPC: H01L21/66 ,  H01L21/268 ,  H01L21/78

CPC classification number: H01L22/12 ,  H01L21/268 ,  H01L21/7806 ,  H01L22/20

Abstract: A method and apparatus are provided. In an example, a volume portion of the solid body is exposed to light waves of different wavelengths, wherein the light waves are partly reflected at surfaces of the solid body. Light parameters of the reflected light waves are at least partly acquired using a sensor device. Distance information and/or intensity information are/is ascertained from at least a portion of the acquired light parameters. A thickness and/or a transmittance of the solid body in the volume portion are/is determined based upon the distance information and/or the intensity information. Laser radiation is introduced into the volume portion to produce a modification in the interior of the solid body, wherein at least one laser parameter of the laser radiation is set at least depending on the thickness and/or the transmittance such that the modification is at a predefined distance from a surface of the solid body.

公开(公告)号：US11712749B2

公开(公告)日：2023-08-01

申请号：US16986411

申请日：2020-08-06

Applicant: Infineon Technologies AG

Inventor： Ralf Rieske ,  Alexander Binter ,  Wolfgang Diewald ,  Bernhard Goller ,  Heimo Graf ,  Gerald Lackner ,  Jan Richter ,  Roland Rupp ,  Guenter Schagerl ,  Marko Swoboda

IPC: B23K26/0622 ,  H01L21/02 ,  B23K26/00 ,  H01L21/78

CPC classification number: B23K26/0624 ,  B23K26/0006 ,  H01L21/02378 ,  H01L21/7813

Abstract: Provided is a parent substrate that includes a central region and an edge region. The edge region surrounds the central region. A detachment layer is formed in the central region. The detachment layer extends parallel to a main surface of the parent substrate. The detachment layer includes modified substrate material. A groove is formed in the edge region. The groove laterally encloses the central region. The groove runs vertically and/or tilted to the detachment layer.

公开(公告)号：US20200343147A1

公开(公告)日：2020-10-29

申请号：US16856258

申请日：2020-04-23

Applicant: Infineon Technologies AG

Inventor： Ralf RIESKE ,  Marko Swoboda ,  Albrecht Ullrich

IPC: H01L21/66 ,  H01L21/268

Abstract: A method and apparatus are provided. In an example, a volume portion of the solid body is exposed to light waves of different wavelengths, wherein the light waves are partly reflected at surfaces of the solid body. Light parameters of the reflected light waves are at least partly acquired using a sensor device. Distance information and/or intensity information are/is ascertained from at least a portion of the acquired light parameters. A thickness and/or a transmittance of the solid body in the volume portion are/is determined based upon the distance information and/or the intensity information. Laser radiation is introduced into the volume portion to produce a modification in the interior of the solid body, wherein at least one laser parameter of the laser radiation is set at least depending on the thickness and/or the transmittance such that the modification is at a predefined distance from a surface of the solid body.

公开(公告)号：US11081393B2

公开(公告)日：2021-08-03

申请号：US16707579

申请日：2019-12-09

Applicant: Infineon Technologies AG

Inventor： Christian Beyer ,  Francisco Javier Santos Rodriguez ,  Hans-Joachim Schulze ,  Marko Swoboda

IPC: H01L21/82 ,  H01L21/683 ,  H01L21/223 ,  H01L21/268 ,  H01L21/02 ,  H01L21/3105 ,  H01L29/16 ,  H01L21/04 ,  H01L21/265

Abstract: A method of splitting a semiconductor wafer includes: forming one or more epitaxial layers on the semiconductor wafer; forming a plurality of device structures in the one or more epitaxial layers; forming a metallization layer and/or a passivation layer over the plurality of device structures; attaching a carrier to the semiconductor wafer with the one or more epitaxial layers, the carrier protecting the plurality of device structures and mechanically stabilizing the semiconductor wafer; forming a separation region within the semiconductor wafer, the separation region having at least one altered physical property which increases thermo-mechanical stress within the separation region relative to the remainder of the semiconductor wafer; and applying an external force to the semiconductor wafer such that at least one crack propagates along the separation region and the semiconductor wafer splits into two separate pieces, one of the pieces retaining the plurality of device structures.

公开(公告)号：US11551981B2

公开(公告)日：2023-01-10

申请号：US16856258

申请日：2020-04-23

Applicant: Infineon Technologies AG

Inventor： Ralf Rieske ,  Marko Swoboda ,  Albrecht Ullrich

IPC: H01L21/66 ,  H01L21/268 ,  H01L21/78

Abstract: A method and apparatus are provided. In an example, a volume portion of the solid body is exposed to light waves of different wavelengths, wherein the light waves are partly reflected at surfaces of the solid body. Light parameters of the reflected light waves are at least partly acquired using a sensor device. Distance information and/or intensity information are/is ascertained from at least a portion of the acquired light parameters. A thickness and/or a transmittance of the solid body in the volume portion are/is determined based upon the distance information and/or the intensity information. Laser radiation is introduced into the volume portion to produce a modification in the interior of the solid body, wherein at least one laser parameter of the laser radiation is set at least depending on the thickness and/or the transmittance such that the modification is at a predefined distance from a surface of the solid body.

公开(公告)号：US20210175123A1

公开(公告)日：2021-06-10

申请号：US16707579

申请日：2019-12-09

Applicant: Infineon Technologies AG

Inventor： Christian Beyer ,  Francisco Javier Santos Rodriguez ,  Hans-Joachim Schulze ,  Marko Swoboda

IPC: H01L21/82 ,  H01L21/683 ,  H01L21/223 ,  H01L21/268 ,  H01L21/265 ,  H01L21/02 ,  H01L21/3105 ,  H01L29/16 ,  H01L21/04

Abstract: A method of splitting a semiconductor wafer includes: forming one or more epitaxial layers on the semiconductor wafer; forming a plurality of device structures in the one or more epitaxial layers; forming a metallization layer and/or a passivation layer over the plurality of device structures; attaching a carrier to the semiconductor wafer with the one or more epitaxial layers, the carrier protecting the plurality of device structures and mechanically stabilizing the semiconductor wafer; forming a separation region within the semiconductor wafer, the separation region having at least one altered physical property which increases thermo-mechanical stress within the separation region relative to the remainder of the semiconductor wafer; and applying an external force to the semiconductor wafer such that at least one crack propagates along the separation region and the semiconductor wafer splits into two separate pieces, one of the pieces retaining the plurality of device structures.

公开(公告)号：US20210053148A1

公开(公告)日：2021-02-25

申请号：US16986411

申请日：2020-08-06

Applicant: Infineon Technologies AG

Inventor： Ralf Rieske ,  Alexander Binter ,  Wolfgang Diewald ,  Bernhard Goller ,  Heimo Graf ,  Gerald Lackner ,  Jan Richter ,  Roland Rupp ,  Guenter Schagerl ,  Marko Swoboda

IPC: B23K26/0622 ,  H01L21/78 ,  B23K26/00 ,  H01L21/02

Abstract: Provided is a parent substrate that includes a central region and an edge region. The edge region surrounds the central region. A detachment layer is formed in the central region. The detachment layer extends parallel to a main surface of the parent substrate. The detachment layer includes modified substrate material. A groove is formed in the edge region. The groove laterally encloses the central region. The groove runs vertically and/or tilted to the detachment layer.