公开(公告)号：US20230005794A1

公开(公告)日：2023-01-05

申请号：US17781585

申请日：2020-12-09

Applicant: Infineon Technologies AG

Inventor： Christian Beyer ,  Francisco Javier Santos Rodriguez ,  Hans-Joachim Schulze ,  Marko David Swoboda

IPC: H01L21/82 ,  H01L21/02 ,  H01L21/04 ,  H01L21/223 ,  H01L21/265 ,  H01L21/268 ,  H01L21/3105 ,  H01L21/683 ,  H01L29/16

Abstract: A method of splitting off a semiconductor wafer from a semiconductor bottle includes: forming a separation region within the semiconductor boule, the separation region having at least one altered physical property which increases thermo-mechanical stress within the separation region relative to the remainder of the semiconductor boule; and applying an external force to the semiconductor boule such that at least one crack propagates along the separation region and a wafer splits from the semiconductor boule.

公开(公告)号：US20230092013A1

公开(公告)日：2023-03-23

申请号：US17946454

申请日：2022-09-16

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Mihai Draghici ,  Matteo Piccin ,  Marko David Swoboda

IPC: H01L21/268 ,  H01L29/06

Abstract: A method of manufacturing a semiconductor device is described. The method includes providing a parent substrate including a substrate portion of a first conductivity type. The method further includes forming an absorption layer in the parent substrate by an ion implantation process of an element through a first surface of the parent substrate. The method further includes forming a semiconductor layer structure on the first surface of the parent substrate. The method further includes splitting the parent substrate along a splitting section through a detachment layer. The detachment layer is arranged between the absorption layer and a second surface of the parent substrate at a vertical distance to the absorption layer.

公开(公告)号：US20230330769A1

公开(公告)日：2023-10-19

申请号：US18336643

申请日：2023-06-16

Applicant: Infineon Technologies AG

Inventor： Ralf Rieske ,  Alexander Binter ,  Wolfgang Diewald ,  Bernhard Goller ,  Heimo Graf ,  Gerald Lackner ,  Jan Richter ,  Roland Rupp ,  Guenter Schagerl ,  Marko David Swoboda

IPC: B23K26/0622 ,  H01L21/02 ,  B23K26/00 ,  H01L21/78

CPC classification number: B23K26/0624 ,  H01L21/02378 ,  B23K26/0006 ,  H01L21/7813

Abstract: Provided is a machining apparatus including a profile sensor unit configured to obtain shape information about a parent substrate; and a laser scan unit configured to direct a laser beam onto the parent substrate, wherein a laser beam axis of the laser beam is tilted to an exposed main surface of the parent substrate, and wherein a track of the laser beam on the parent substrate is controllable as a function of the shape information obtained from the profile sensor unit.

公开(公告)号：US11557506B2

公开(公告)日：2023-01-17

申请号：US17104559

申请日：2020-11-25

Applicant: Infineon Technologies AG

Inventor： Werner Schustereder ,  Alexander Breymesser ,  Mihai Draghici ,  Tobias Franz Wolfgang Hoechbauer ,  Wolfgang Lehnert ,  Hans-Joachim Schulze ,  Marko David Swoboda

IPC: H01L21/00 ,  H01L21/762 ,  H01L21/768 ,  H01L21/265 ,  H01L21/3115 ,  H01L21/78

Abstract: Methods for processing a semiconductor substrate are proposed. An example of a method includes forming cavities in the semiconductor substrate by implanting ions through a first surface of the semiconductor substrate. The cavities define a separation layer in the semiconductor substrate. A semiconductor layer is formed on the first surface of the semiconductor substrate. Semiconductor device elements are formed in the semiconductor layer. The semiconductor substrate is separated along the separation layer into a first substrate part including the semiconductor layer and a second substrate part.