公开(公告)号：US20250022918A1

公开(公告)日：2025-01-16

申请号：US18768307

申请日：2024-07-10

Applicant: Infineon Technologies AG

Inventor： Christian HECHT ,  Wolfgang BERGNER ,  Larissa WEHRHAHN-KILIAN

IPC: H01L29/16 ,  H01L21/02 ,  H01L23/04 ,  H01L29/06 ,  H01L29/36 ,  H01L29/78

Abstract: The disclosure relates to a semiconductor die with a semiconductor device in a semiconductor body, the semiconductor body comprising a silicon carbide substrate; an epitaxial silicon carbide layer system on a first side of the silicon carbide substrate; an interruption layer; wherein the interruption layer is embedded either into the silicon carbide substrate or into the epitaxial silicon carbide layer system, in each case at a vertical distance from the first side of the silicon carbide substrate.

公开(公告)号：US20150364550A1

公开(公告)日：2015-12-17

申请号：US14306071

申请日：2014-06-16

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim SCHULZE ,  Jens Peter KONRATH ,  Roland RUPP ,  Christian HECHT

IPC: H01L29/16 ,  H01L21/02

CPC classification number: H01L29/1608 ,  H01L21/0465 ,  H01L21/26506 ,  H01L21/762 ,  H01L21/76254 ,  H01L29/7395 ,  H01L29/7827

Abstract: Representative implementations of devices and techniques provide an optimized layer for a semiconductor component. In an example, a doped portion of a wafer, forming a substrate layer may be transferred from the wafer to an acceptor, or handle wafer. A component layer may be applied to the substrate layer. The acceptor wafer is detached from the substrate layer. In some examples, further processing may be executed with regard to the substrate and/or component layers.

Abstract translation: 器件和技术的代表性实现为半导体部件提供优化的层。 在一个示例中，形成衬底层的晶片的掺杂部分可以从晶片转移到受主或处理晶片。 组分层可以施加到基底层。 受主晶片与衬底层分离。 在一些示例中，可以针对衬底和/或组件层执行进一步的处理。