公开(公告)号：US20240047207A1

公开(公告)日：2024-02-08

申请号：US17879460

申请日：2022-08-02

Applicant: Infineon Technologies AG

Inventor： Christian Zmoelnig ,  Tobias Franz Wolfgang Hoechbauer ,  Andreas Voerckel ,  Hans Weber

IPC: H01L21/02 ,  H01L29/04 ,  H01L29/16 ,  H01L29/778 ,  C30B25/20 ,  C30B23/02 ,  C30B29/36 ,  C30B29/68

CPC classification number: H01L21/02609 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02529 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/7786 ,  C30B25/20 ,  C30B23/025 ,  C30B29/36 ,  C30B29/68

Abstract: A method of forming a semiconductor device includes providing a base substrate comprising SiC and a growth surface extending along a plane that is angled relative to a first crystallographic plane of the SiC from the base substrate, forming first and second trenches in the base substrate that extend from the growth surface into the base substrate, epitaxially forming a first SiC layer on the growth surface of the base substrate by a step-controlled epitaxy technique, and epitaxially forming a second SiC layer on the first SiC layer, wherein the first SiC layer is a layer of α-SiC, and wherein the second SiC layer is a layer of β-SiC.